Add to ORKGThe interaction of electrons with interface phonons is predicted to be of major importance in narrow quantum wells. Time-integrated Raman measurements of non-equilibrium phonons in GaAs/AlAs structures show strong coupling to AlAs interface modes, in good agreement with theoretical predictions based on a microscopic phonon model. Monte Carlo simulations of time-resolved Raman measurements of interface phonons in GaAs/AlGaAs structures provide further confirmation of this result
We have used light scattering techniques to probe the vibrational properties of GaAs/AlAs superlatti...
We have used light scattering techniques to probe the vibrational properties of GaAs/AlAs superlatti...
We have used light scattering techniques to probe the vibrational properties ofGaAs/AlAs superlatti...
The interaction of electrons with interface phonons is predicted to be of major importance in narrow...
We present measurements and calculations of the resonant Raman line shape due to optic phonons in Ga...
We report the observation of interface phonons by Raman scattering from GaAs-AlAs superlattices. The...
The electron–optical-phonon scattering rates in GaAs/AlAs quantum wells are calculated on the basis ...
We demonstrate that the nature of the interface between ZnSe and semi‐insulating GaAs can be studied...
We study the dependence of the optic phonon Raman line shape of GaAs/AlAs multiple quantum well on p...
We present a calculation of the electron-LO-phonon scattering rate in quasi-two-dimensional systems,...
We present a calculation of the electron optical-phonon scattering rates in GaAs/AlAs quantum wells,...
We present a calculation of the electron-LO-phonon scattering rate in quasi-two-dimensional systems,...
We measure the hot phonon population of the GaAs LO phonons using a picosecond Raman scattering tech...
The spatial distribution of the wave functions for electrons in a coupled-quantum-well system of GaA...
Anti-Stokes Raman scattering has been used to investigate hot carrier dynamics in GaAs/AlGaAs quantu...
We have used light scattering techniques to probe the vibrational properties of GaAs/AlAs superlatti...
We have used light scattering techniques to probe the vibrational properties of GaAs/AlAs superlatti...
We have used light scattering techniques to probe the vibrational properties ofGaAs/AlAs superlatti...
The interaction of electrons with interface phonons is predicted to be of major importance in narrow...
We present measurements and calculations of the resonant Raman line shape due to optic phonons in Ga...
We report the observation of interface phonons by Raman scattering from GaAs-AlAs superlattices. The...
The electron–optical-phonon scattering rates in GaAs/AlAs quantum wells are calculated on the basis ...
We demonstrate that the nature of the interface between ZnSe and semi‐insulating GaAs can be studied...
We study the dependence of the optic phonon Raman line shape of GaAs/AlAs multiple quantum well on p...
We present a calculation of the electron-LO-phonon scattering rate in quasi-two-dimensional systems,...
We present a calculation of the electron optical-phonon scattering rates in GaAs/AlAs quantum wells,...
We present a calculation of the electron-LO-phonon scattering rate in quasi-two-dimensional systems,...
We measure the hot phonon population of the GaAs LO phonons using a picosecond Raman scattering tech...
The spatial distribution of the wave functions for electrons in a coupled-quantum-well system of GaA...
Anti-Stokes Raman scattering has been used to investigate hot carrier dynamics in GaAs/AlGaAs quantu...
We have used light scattering techniques to probe the vibrational properties of GaAs/AlAs superlatti...
We have used light scattering techniques to probe the vibrational properties of GaAs/AlAs superlatti...
We have used light scattering techniques to probe the vibrational properties ofGaAs/AlAs superlatti...