A straightforward method for the analysis of channeling RBS spectra is developed and validated. This method needs a minimum of computational complexity and does not require the a priori knowledge of the location of the scattering centres and of their dechanneling cross section. The method is applied to channeling RBS spectra obtained along the [100] direction in a hydrogen-implanted (100) silicon crystal to verify that the evaluated displaced-atom depth distribution is independent of the probe energy
This thesis reports the implementation of a Timepix position sensitive detector in a ion beam facili...
We present new results on the channeling of B ions in Si crystals. Standard surface barrier detector...
Rutherford backscattering spectroscopy (RBS) is a non-destructive ion-beam analytical technique that...
A straightforward method for the analysis of channeling RBS spectra is developed and validated. This...
The RBS-channeling technique has been used to measure damage concentration profiles in fully relaxed...
International audienceAs Rutherford backscattering spectrometry in channeling mode (RBS/C) is an eff...
Rutherford backscattering spectrometry in a channeling direction (RBS/C) is a powerful tool for anal...
Rutherford backscattering channeling (RBS-C) spectra of ion-implanted Si are simulated according to ...
The aim of this work is to define both the experimental procedures (random geometry and maximum beam...
Rutherford Backscattering Spectrometry (RBS) is a very popular, fast, and non-destructive technique ...
A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling ...
In this article on ions with the (110) orientation were implanted into the silicon single crystal. U...
This work describes a computer algorithm for automatic extraction of the energy calibration paramete...
This thesis reports the implementation of a Timepix position sensitive detector in a ion beam facili...
We present new results on the channeling of B ions in Si crystals. Standard surface barrier detector...
Rutherford backscattering spectroscopy (RBS) is a non-destructive ion-beam analytical technique that...
A straightforward method for the analysis of channeling RBS spectra is developed and validated. This...
The RBS-channeling technique has been used to measure damage concentration profiles in fully relaxed...
International audienceAs Rutherford backscattering spectrometry in channeling mode (RBS/C) is an eff...
Rutherford backscattering spectrometry in a channeling direction (RBS/C) is a powerful tool for anal...
Rutherford backscattering channeling (RBS-C) spectra of ion-implanted Si are simulated according to ...
The aim of this work is to define both the experimental procedures (random geometry and maximum beam...
Rutherford Backscattering Spectrometry (RBS) is a very popular, fast, and non-destructive technique ...
A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling ...
In this article on ions with the (110) orientation were implanted into the silicon single crystal. U...
This work describes a computer algorithm for automatic extraction of the energy calibration paramete...
This thesis reports the implementation of a Timepix position sensitive detector in a ion beam facili...
We present new results on the channeling of B ions in Si crystals. Standard surface barrier detector...
Rutherford backscattering spectroscopy (RBS) is a non-destructive ion-beam analytical technique that...