The two-dimensional surface electronic band structure of H:GaAs(110) is studied by angular resolved ultraviolet photoemission spectroscopy along the XBAR'-MBAR and XBAR-MBAR symmetry lines and in the high symmetry points of the surface Brillouin zone. Three surface state bands are resolved in the first 5 eV below the upper valence band edge. A comparison with theoretical band structure calculations yields a satisfactory agreement, giving evidence of hydrogen induced GaAs(110) surface derelaxation. The clean GaAs(110) surface electronic band structure is studied comparing results with available theoretical and experimental data
In the present study the link between the inclusion of H species in GaAs and the appearance in the b...
We have used synchrotron-based high-resolution core-level photoemission and valence-band emission me...
We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure ...
The two-dimensional surface electronic band structure of H:GaAs(110) is studied by angular resolved ...
A critical review of experimental results aiming at determining the atomic geometry and the electron...
The interaction of atomic hydrogen with the cleaved GaAs (110) surface has been investigated by high...
The interaction of atomic hydrogen with the cleaved GaAs(110) surface has been investigated by high-...
Results are presented of a new calculation of the surface states at the (110) surface of GaAs. By us...
We analyzed atomic hydrogen chemisorption on GaAs(110) surfaces through synchrotron radiation photoe...
We present a synchrotron-radiation photoemission investigation of hydrogen chemisorption on GaAs(110...
Angle-resolved ultraviolet photoemission spectra are interpreted by combining the energetics and spa...
Up to now only indirect evidences of hydrogen induced derelaxation of the GaAs(110) surface have bee...
Angle-resolved photoemission and inverse photoemission spectroscopy have been applied to investigate...
Angle-resolved off-normal constant-initial-state (CIS) photoemission is shown to be effectively appl...
We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure ...
In the present study the link between the inclusion of H species in GaAs and the appearance in the b...
We have used synchrotron-based high-resolution core-level photoemission and valence-band emission me...
We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure ...
The two-dimensional surface electronic band structure of H:GaAs(110) is studied by angular resolved ...
A critical review of experimental results aiming at determining the atomic geometry and the electron...
The interaction of atomic hydrogen with the cleaved GaAs (110) surface has been investigated by high...
The interaction of atomic hydrogen with the cleaved GaAs(110) surface has been investigated by high-...
Results are presented of a new calculation of the surface states at the (110) surface of GaAs. By us...
We analyzed atomic hydrogen chemisorption on GaAs(110) surfaces through synchrotron radiation photoe...
We present a synchrotron-radiation photoemission investigation of hydrogen chemisorption on GaAs(110...
Angle-resolved ultraviolet photoemission spectra are interpreted by combining the energetics and spa...
Up to now only indirect evidences of hydrogen induced derelaxation of the GaAs(110) surface have bee...
Angle-resolved photoemission and inverse photoemission spectroscopy have been applied to investigate...
Angle-resolved off-normal constant-initial-state (CIS) photoemission is shown to be effectively appl...
We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure ...
In the present study the link between the inclusion of H species in GaAs and the appearance in the b...
We have used synchrotron-based high-resolution core-level photoemission and valence-band emission me...
We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure ...