Luminescence at an energy higher than the Si band-gap energy has been observed following H implantation and annealing treatments of Si samples. This phenomenon is discussed considering the damage caused by the H implantation and its evolution with thermal treatments. No definitive answer on the origin of the luminescence is given but various possible models are proposed
International audienceMeV energy hydrogen implantation in silicon followed by a thermal annealing is...
International audienceMeV energy hydrogen implantation in silicon followed by a thermal annealing is...
Silicon implanted and annealed SiO2 layers are studied usin g photoluminescence (PL) and positron an...
Ion implanted crystalline Si samples show luminescence (PL) in the visible at cryogenic temperatures...
We have observed a set of broad luminescence bands between 1.07 and 0.85 eV, in He-implanted Si anne...
We have observed a set of broad luminescence bands between 1.07 and 0.85 eV, in He-implanted Si anne...
We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- relat...
We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- relat...
We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- relat...
We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- relat...
We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- relat...
Visible light emission from silicon nanostructures formed by Si+ ion implantation into a SiO2 matrix...
Visible light emission from silicon nanostructures formed by Si+ ion implantation into a SiO2 matrix...
Silicon implanted and annealed SiO2 layers are studied usin g photoluminescence (PL) and positron an...
International audienceMeV energy hydrogen implantation in silicon followed by a thermal annealing is...
International audienceMeV energy hydrogen implantation in silicon followed by a thermal annealing is...
International audienceMeV energy hydrogen implantation in silicon followed by a thermal annealing is...
Silicon implanted and annealed SiO2 layers are studied usin g photoluminescence (PL) and positron an...
Ion implanted crystalline Si samples show luminescence (PL) in the visible at cryogenic temperatures...
We have observed a set of broad luminescence bands between 1.07 and 0.85 eV, in He-implanted Si anne...
We have observed a set of broad luminescence bands between 1.07 and 0.85 eV, in He-implanted Si anne...
We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- relat...
We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- relat...
We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- relat...
We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- relat...
We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- relat...
Visible light emission from silicon nanostructures formed by Si+ ion implantation into a SiO2 matrix...
Visible light emission from silicon nanostructures formed by Si+ ion implantation into a SiO2 matrix...
Silicon implanted and annealed SiO2 layers are studied usin g photoluminescence (PL) and positron an...
International audienceMeV energy hydrogen implantation in silicon followed by a thermal annealing is...
International audienceMeV energy hydrogen implantation in silicon followed by a thermal annealing is...
International audienceMeV energy hydrogen implantation in silicon followed by a thermal annealing is...
Silicon implanted and annealed SiO2 layers are studied usin g photoluminescence (PL) and positron an...