Add to ORKGThis paper presents an extension of the theoretical approach for both the short- and long-range components of the Coulomb interaction among carriers in semiconductors to the case of an arbitrary isotropic multiband model, devised for Monte Carlo simulation of silicon devices. The analytical and numerical aspects of the model are discussed in detail. Results for the effect of the Coulomb interaction on the carrier distribution function and on the energy-loss properties of the carrier gas are presented for the case of electrons in homogeneous and inhomogeneous silicon structures
A critical review of the Monte Carlo simulation as applied to semiconductor device modelling is pres...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this sel...
This paper presents an extension of the theoretical approach for both the short- and long-range comp...
A Monte Carlo approach to electron-electron scattering in silicon suitable to device analysis is pre...
We present the results of Monte Carlo simulations of transport of charge carriers of a single type i...
A new multiscale method is presented for modeling charge transport across a semi-conductor heteroint...
A generalized Monte Carlo method for the solution of the Wigner transport equation in semiconductor ...
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the ...
The theory of electron transport in semiconductors is traditionally formulated in terms of the semic...
We briefly review the hot-electron effects which have necessitated the development of accurate solut...
The paradigm shift from a field- to an energy-based framework in the modeling of hot-carrier-induced...
The review presents in a comprehensive and tutorial form the basic principles of the Monte Carlo met...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
The effects of Coulomb interaction on charge transport in a model of light emission from an array of...
A critical review of the Monte Carlo simulation as applied to semiconductor device modelling is pres...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this sel...
This paper presents an extension of the theoretical approach for both the short- and long-range comp...
A Monte Carlo approach to electron-electron scattering in silicon suitable to device analysis is pre...
We present the results of Monte Carlo simulations of transport of charge carriers of a single type i...
A new multiscale method is presented for modeling charge transport across a semi-conductor heteroint...
A generalized Monte Carlo method for the solution of the Wigner transport equation in semiconductor ...
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the ...
The theory of electron transport in semiconductors is traditionally formulated in terms of the semic...
We briefly review the hot-electron effects which have necessitated the development of accurate solut...
The paradigm shift from a field- to an energy-based framework in the modeling of hot-carrier-induced...
The review presents in a comprehensive and tutorial form the basic principles of the Monte Carlo met...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
The effects of Coulomb interaction on charge transport in a model of light emission from an array of...
A critical review of the Monte Carlo simulation as applied to semiconductor device modelling is pres...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this sel...