A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presented. The theoretical approach is based on a Monte Carlo simulation of the coupled free-carrier and exciton dynamics, and includes various mechanisms contributing to exciton formation and relaxation. Our investigation clarifies the ori,ain of excitonic luminescence in time-resolved experiments. In particular, we address the problem of the relative efficiencies of exciton formation assisted by either LO phonons or acoustic phonons, respectively
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
We have found experimentally, that the exciton luminescence rise times in GaAs/AlGaAs quantum wells ...
Excitonic processes involving LA, TA, and LO phonons are studied in quantum wells. We have derived e...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
We investigate the exciton formation process from free carriers in a single GaAs quantum well. We fo...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
We have found experimentally, that the exciton luminescence rise times in GaAs/AlGaAs quantum wells ...
Excitonic processes involving LA, TA, and LO phonons are studied in quantum wells. We have derived e...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
A microscopic analysis of exciton formation and relaxation in photoexcited quantum wells is presente...
We investigate the exciton formation process from free carriers in a single GaAs quantum well. We fo...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
Exciton formation and relaxation in GaAs bulk epilayers have been studied by means of time-resolved ...
We have found experimentally, that the exciton luminescence rise times in GaAs/AlGaAs quantum wells ...
Excitonic processes involving LA, TA, and LO phonons are studied in quantum wells. We have derived e...