Add to ORKGWe describe an analytical method to calculate the strain field and the corresponding band gap modulation induced in a quantum well by a surface stressor of arbitrary shape. In this way, it is possible to engineer the confinement potential of different strained nanostructures based on patterned heterojunctions. Band gap modulations up to 130-140 meV are predicted for suitably designed II-VI/III-V and III-V/III-V heterostructures. (C) 1998 American Institute of Physics. [S0021-8979(98)02219-1]
Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to...
A model of strain balanced quantum well solar cells is presented, together with a high efficiency de...
The scaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the driving f...
We describe an analytical method to calculate the strain field and the corresponding band gap modula...
AbstractWe develop the mechanics theory of a phenomenon in which strain is induced in nanoscale stru...
We develop the mechanics theory of a phenomenon in which strain is induced in nanoscale structures i...
We have calculated band-edge energies for most combinations of zinc blende AlN, GaN, InN, GaP, GaAs,...
Quantum dots in nanowires grow on a (111) substrate and it is expected that the modifications of the...
An analysis is presented on the effect of the strain field originating from a subsurface stressor (p...
Nanostructured semiconducting materials such as nanoparticles, quantum dots, nanowires, nanorods, na...
The effects of the strain caused by lattice mismatched epitaxy on the electronic bandstructure of se...
We tune the emission wavelength of an InAsP quantum dot in an InP nanowire over 200 meV by depositin...
We are briefly reviewing the current status of elastic strain field determination in III–V heteroepi...
The utilization of self-assembling phenomena is important in nano material processes. For the fabric...
We present numerical calculations of material gain and threshold current density in compressively st...
Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to...
A model of strain balanced quantum well solar cells is presented, together with a high efficiency de...
The scaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the driving f...
We describe an analytical method to calculate the strain field and the corresponding band gap modula...
AbstractWe develop the mechanics theory of a phenomenon in which strain is induced in nanoscale stru...
We develop the mechanics theory of a phenomenon in which strain is induced in nanoscale structures i...
We have calculated band-edge energies for most combinations of zinc blende AlN, GaN, InN, GaP, GaAs,...
Quantum dots in nanowires grow on a (111) substrate and it is expected that the modifications of the...
An analysis is presented on the effect of the strain field originating from a subsurface stressor (p...
Nanostructured semiconducting materials such as nanoparticles, quantum dots, nanowires, nanorods, na...
The effects of the strain caused by lattice mismatched epitaxy on the electronic bandstructure of se...
We tune the emission wavelength of an InAsP quantum dot in an InP nanowire over 200 meV by depositin...
We are briefly reviewing the current status of elastic strain field determination in III–V heteroepi...
The utilization of self-assembling phenomena is important in nano material processes. For the fabric...
We present numerical calculations of material gain and threshold current density in compressively st...
Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to...
A model of strain balanced quantum well solar cells is presented, together with a high efficiency de...
The scaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the driving f...