Surface electronic states of Yb silicide ultrathin films studied with He metastable deexcitation spectroscopy

D'Addato, Sergio
Pasquali, Luca
Nannarone, Stefano

Open link

Publication date

January 2002

DOI

10.1016/S0368-2048(02)00179-2

Publisher

Elsevier BV

ISSN

0368-2048

Abstract

We studied the growth of Yb silicide films on Si(100) with Metastable Deexcitation Spectroscopy (MDS) assisted by Low Energy Electron Diffraction (LEED). Different surface structure phases are observed at progressively high annealing temperature. Annealing at T<550 degreesC produces Yb-rich disordered compounds, with metallic character shown on MDS. A 3 X 1 ordered phase is observed by low energy electron diffraction (LEED) after annealing of the films at about 640 T and it is associated with the formation of a stable silicide. Correspondingly, electronic states assigned to the Yb 6s-5d hybridised band and to Si 3s and 3p bands in the compound are observed in MDS. A further increase in the annealing temperature causes the system to evolve r...

Extracted data

We use cookies to provide a better user experience.

Data Protection

Surface electronic states of Yb silicide ultrathin films studied with He metastable deexcitation spectroscopy

Abstract

Extracted data

Surface electronic states of Yb silicide ultrathin films studied with He metastable deexcitation spectroscopy

Abstract

Extracted data

Related items

Related items