A 36-dBm, high-linearity, single-ended Class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE) of 34%. We demonstrate experimentally that Class B power amplifiers can achieve IM3 suppression comparable to Class A, while providing approximately 10% improved power added efficiency
This manuscript describes the design, development, and implementation of a linear high efficiency po...
A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron ...
This paper presents the design and implementation of an inverse class F power amplifier (PA) using a...
A 36-dBm, high-linearity, single-ended Class B MMIC power amplifier is reported in GaN HEMT technolo...
A 36-dBm high-linearity single-ended common-source class-B monolithic-microwave integrated-circuit p...
The design, simulation and measurement results on a highly linear single-ended Class B PA based on G...
We describe the design and simulation of highly linear and highly efficient common source Class B po...
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to o...
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to o...
We demonstrate the design of a linear and high efficient power amplifier (PA) by using different gat...
Abstract—A class B and a class F power amplifier are described using a GaN HEMT device. They both we...
Modern digital telecommunication systems demand a steady improvement of the RF front-end’s performan...
Abstract-Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEM...
In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobili...
This paper describes the design of a highly efficient and linear GaN HEMT power amplifier which may ...
This manuscript describes the design, development, and implementation of a linear high efficiency po...
A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron ...
This paper presents the design and implementation of an inverse class F power amplifier (PA) using a...
A 36-dBm, high-linearity, single-ended Class B MMIC power amplifier is reported in GaN HEMT technolo...
A 36-dBm high-linearity single-ended common-source class-B monolithic-microwave integrated-circuit p...
The design, simulation and measurement results on a highly linear single-ended Class B PA based on G...
We describe the design and simulation of highly linear and highly efficient common source Class B po...
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to o...
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to o...
We demonstrate the design of a linear and high efficient power amplifier (PA) by using different gat...
Abstract—A class B and a class F power amplifier are described using a GaN HEMT device. They both we...
Modern digital telecommunication systems demand a steady improvement of the RF front-end’s performan...
Abstract-Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEM...
In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobili...
This paper describes the design of a highly efficient and linear GaN HEMT power amplifier which may ...
This manuscript describes the design, development, and implementation of a linear high efficiency po...
A highly linear low-noise amplifier (LNA) based on a commercial Gallium Nitride (GaN) high electron ...
This paper presents the design and implementation of an inverse class F power amplifier (PA) using a...