Add to ORKGThe design, simulation and measurement results on a highly linear single-ended Class B PA based on GaN RF power devices have been presented
This paper presents the design and implementation of an inverse class F power amplifier (PA) using a...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized f...
The design, simulation and measurement results on a highly linear single-ended Class B PA based on G...
A 36-dBm, high-linearity, single-ended Class B MMIC power amplifier is reported in GaN HEMT technolo...
A 36-dBm high-linearity single-ended common-source class-B monolithic-microwave integrated-circuit p...
Modern digital telecommunication systems demand a steady improvement of the RF front-end’s performan...
We describe the design and simulation of highly linear and highly efficient common source Class B po...
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to o...
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to o...
Abstract—A class B and a class F power amplifier are described using a GaN HEMT device. They both we...
We demonstrate the design of a linear and high efficient power amplifier (PA) by using different gat...
With the continuous development of modern wireless communication systems, demand for cost effective,...
The design and implementation of a class-J mode RF power amplifier is described. The experimental re...
In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobili...
This paper presents the design and implementation of an inverse class F power amplifier (PA) using a...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized f...
The design, simulation and measurement results on a highly linear single-ended Class B PA based on G...
A 36-dBm, high-linearity, single-ended Class B MMIC power amplifier is reported in GaN HEMT technolo...
A 36-dBm high-linearity single-ended common-source class-B monolithic-microwave integrated-circuit p...
Modern digital telecommunication systems demand a steady improvement of the RF front-end’s performan...
We describe the design and simulation of highly linear and highly efficient common source Class B po...
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to o...
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to o...
Abstract—A class B and a class F power amplifier are described using a GaN HEMT device. They both we...
We demonstrate the design of a linear and high efficient power amplifier (PA) by using different gat...
With the continuous development of modern wireless communication systems, demand for cost effective,...
The design and implementation of a class-J mode RF power amplifier is described. The experimental re...
In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobili...
This paper presents the design and implementation of an inverse class F power amplifier (PA) using a...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized f...