nGaAsP quantum well structures are intermixed to varying degrees when rapidly annealed at elevated temperatures while capped with films of SiNx, and SiOyNx of different compositions. Laser diodes are fabricated with both blue and red shifted samples and their performances are reported
Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD...
Impurity free vacancy disordering (IFVD) has been used to investigate the atomic interdiffusion of I...
Wedemonstrate bandgap tuning of InGaAsP multiple quantum well structures by utilizing an impurity-fr...
We demonstrate a tunable laser consisting of two gain sections with different bandgap energies using...
In this work, a two-section wavelength tunable laser diode is demonstrated using an InGaAsP multiple...
Sputtering a thin layer of SiO2 (≈200 nm) followed by high temperature annealing has recently been f...
The bandgap of InGaAs-InGaAsP multiple-quantum-well (MQW) material can be accurately tuned by photoa...
The intermixing of a InGaAs/InGaAsP multi-quantum-well (MQW) structure induced by SiO2 dielectric ca...
6 p.InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have b...
Bandgap-modified InAlGaAs/InP multi-quantum well lasers have been demonstrated using an impurity-fre...
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...
A single waveguide laser with two separately addressed sections is fabricated using selective area i...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
Abstract- GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions an...
We report the selective area bandgap tuning of multiple quantum well structures by an impurity free ...
Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD...
Impurity free vacancy disordering (IFVD) has been used to investigate the atomic interdiffusion of I...
Wedemonstrate bandgap tuning of InGaAsP multiple quantum well structures by utilizing an impurity-fr...
We demonstrate a tunable laser consisting of two gain sections with different bandgap energies using...
In this work, a two-section wavelength tunable laser diode is demonstrated using an InGaAsP multiple...
Sputtering a thin layer of SiO2 (≈200 nm) followed by high temperature annealing has recently been f...
The bandgap of InGaAs-InGaAsP multiple-quantum-well (MQW) material can be accurately tuned by photoa...
The intermixing of a InGaAs/InGaAsP multi-quantum-well (MQW) structure induced by SiO2 dielectric ca...
6 p.InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have b...
Bandgap-modified InAlGaAs/InP multi-quantum well lasers have been demonstrated using an impurity-fre...
The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can be accurately tuned by photo-...
A single waveguide laser with two separately addressed sections is fabricated using selective area i...
A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatial...
Abstract- GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions an...
We report the selective area bandgap tuning of multiple quantum well structures by an impurity free ...
Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD...
Impurity free vacancy disordering (IFVD) has been used to investigate the atomic interdiffusion of I...
Wedemonstrate bandgap tuning of InGaAsP multiple quantum well structures by utilizing an impurity-fr...