Blue And Red Shifted, Partially Intermixed Ingaasp Quantum Well Semiconductor Laser Diodes

  • Tabbakh, Thamer
  • LiKamWa, Patrick
Publication date
November 2017
Publisher
Information Bulletin on Variable Stars (IBVS)

Abstract

nGaAsP quantum well structures are intermixed to varying degrees when rapidly annealed at elevated temperatures while capped with films of SiNx, and SiOyNx of different compositions. Laser diodes are fabricated with both blue and red shifted samples and their performances are reported

Extracted data

Related items

Tunable Laser Diode Using Selectively Intermixed Ingaasp Multiple Quantum Wells
  • Tabbakh, Thamer
  • Likamwa, Patrick
May 2018

We demonstrate a tunable laser consisting of two gain sections with different bandgap energies using...

Tunable Laser Diode Using Partially Intermixed Ingaasp Multiple Quantum Well
  • Tabbakh, Thamer
  • LiKamWa, Patrick
January 2018

In this work, a two-section wavelength tunable laser diode is demonstrated using an InGaAsP multiple...

Extended cavity lasers in InGaAs-InGaAsP and GalnP-AlGalnP multi-quantum well structure using a sputtered SiO2 technique
  • Qiu, Bocang
  • Hamilton, Craig J.
  • Ke, Maolong
  • Kowalski, Olck P.
  • McDougall, Stewart D.
  • Bryce, A. Catrina
  • Marsh, John H.
January 1999

Sputtering a thin layer of SiO2 (≈200 nm) followed by high temperature annealing has recently been f...

We use cookies to provide a better user experience.