Heterogeneous Technology Configurable Fabrics For Field-Programmable Co-Design Of Cmos And Spin-Based Devices

The architecture, operation, and characteristics of two post-CMOS reconfigurable fabrics are identified to realize energy-sparing and resilience features, while remaining feasible for near-Term fabrication. First, Storage Cell Replacement Fabrics (SCRFs) provide a reconfigurable computing platform utilizing near-zero leakage Spin Hall Effect devices which replace SRAM bit-cells within Look-Up Tables (LUTs) and/or switch boxes to complement the advantages of MOS transistor-based multiplexer select trees. Second, Heterogeneous Technology Configurable Fabrics (HTCFs) are identified to extend reconfigurable computing platforms via a palette of CMOS, spinbased, or other emerging device technologies, such as various Magnetic Tunnel Junction (MTJ) and Domain Wall Motion devices. HTCFs are composed of a triad of Emerging Device Blocks, CMOS Logic Blocks, and Signal Conversion Blocks. This facilitates a novel architectural approach to reduce leakage energy, minimize communication occurrence and energy cost by eliminating unnecessary data transfer, and support auto-Tuning for resilience. Furthermore, HTCFs enable new advantages of technology co-design which trades off alternative mappings between emerging devices and transistors at runtime by allowing dynamic remapping to adaptively leverage the intrinsic computing features of each device technology. Both SCRFs and HTCFs offer a platform for fine-grained Logic-In-Memory architectures and runtime adaptive hardware. SPICE simulations indicate 6% to 67% reduction in read energy, 21% reduction in reconfiguration energy, and 78% higher clock frequency versus alternative fabricated emerging device architectures, and a significant reduction in leakage compared to CMOS-based approaches.