Spin-transfer torque (STT) random access memory has been researched as a promising alternative for static random access memory in reconfigurable fabrics, particularly in lookup tables (LUTs), due to its nonvolatility, low standby and static power, and high integration density features. In this brief, we leverage physical characteristics of magnetic tunnel junctions (MTJs) to design a unique reference MTJ which has a calibrated resistance matching the STT-based LUT (STT-LUT) circuit requirements to provide optimal reading operation. Results obtained show 42% and 70% power-delay product (PDP) improvement over previous MTJ-based LUT designs. Moreover, a four-input adaptive STT-based LUT (A-LUT) is proposed based on the developed STT-LUT, which...
MRAM technology provides a combination of fast access time, non-volatility, data retention and endur...
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-effici...
Spin-transfer torque magnetic tunnel junction (STT-MTJ) technology is an attractive solution for des...
Magnetic Tunnel Junction(MTJ) is a spintronic device that offers non volatile memory\ud capable of f...
In this paper, we leverage magnetic tunnel junction (MTJ) devices to design an energy-efficient nonv...
In recent years, spin transfer torque (STT)-magnetic random access memory (MRAM) was seen as one of ...
This thesis presents three research contributions in the areas of modelling, circuit-level design, a...
With traditional complementary metal oxide semiconductor (CMOS)-based devices and switching methods...
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility a...
International audienceMagnetic Random Access Memory (MRAM) is a promising candidate to be the univer...
Spin-transfer torque magnetic random access memories (STT-MRAMs) based on magnetic tunnel junction (...
International audienceSpin-orbit torques (SOT) provide a versatile tool to manipulate the magnetizat...
textIn this work, we investigate the prospects for spin-transfer-torque random access memory (STTRAM...
International audiencePerpendicular-anisotropy magnetic tunnel junction (MTJ) is one of the most pro...
Spin Transfer Torque (STT) switching realized using a Magnetic Tunnel Junction (MTJ) device has show...
MRAM technology provides a combination of fast access time, non-volatility, data retention and endur...
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-effici...
Spin-transfer torque magnetic tunnel junction (STT-MTJ) technology is an attractive solution for des...
Magnetic Tunnel Junction(MTJ) is a spintronic device that offers non volatile memory\ud capable of f...
In this paper, we leverage magnetic tunnel junction (MTJ) devices to design an energy-efficient nonv...
In recent years, spin transfer torque (STT)-magnetic random access memory (MRAM) was seen as one of ...
This thesis presents three research contributions in the areas of modelling, circuit-level design, a...
With traditional complementary metal oxide semiconductor (CMOS)-based devices and switching methods...
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility a...
International audienceMagnetic Random Access Memory (MRAM) is a promising candidate to be the univer...
Spin-transfer torque magnetic random access memories (STT-MRAMs) based on magnetic tunnel junction (...
International audienceSpin-orbit torques (SOT) provide a versatile tool to manipulate the magnetizat...
textIn this work, we investigate the prospects for spin-transfer-torque random access memory (STTRAM...
International audiencePerpendicular-anisotropy magnetic tunnel junction (MTJ) is one of the most pro...
Spin Transfer Torque (STT) switching realized using a Magnetic Tunnel Junction (MTJ) device has show...
MRAM technology provides a combination of fast access time, non-volatility, data retention and endur...
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-effici...
Spin-transfer torque magnetic tunnel junction (STT-MTJ) technology is an attractive solution for des...