Photoluminescence(PL) studies on boron carbon nitride (BCN) thin films deposited at various temperatures were conducted. Two sharp PL peaks in the visible region were identified at 498 nm and 599 nm for the BCN films with variable peak intensities. Low temperature PL study was conducted at 77 K for the films. It was found that, the PL intensity tended to decrease significantly with decrease in the substrate temperature during the measurement. A rare PL phenomenon of negative thermal quenching (NTQ) was observed in BCN thin films
A great part of interest has been paid for fabricating new materials with novel mechanical, optical,...
As complementary metal-oxide semiconductor (CMOS) devices shrink to smaller size, the problems relat...
Investigation of wet chemical etching Boron carbon nitride (BCN) thin films deposited by dual magnet...
Boron carbon nitride (BCN) thin films are investigated for their optical properties. BCN, is the una...
The amorphous boron-carbon-nitrogen (BCN) thin films were prepared by RF magnetron sputtering from a...
Optical properties of the Boron Carbon Nitride (BCN) thin films deposited in a multi gun radio frequ...
Boron carbon nitride (BCN) ternary compounds have similarities in the structure and difference in pr...
Thin films of boron carbon nitride (BCN) are deposited by co-sputtering of B4C (Direct Current - DC)...
We present the deposition and optical characterization of amorphous thin films of boron carbonitride...
We present the deposition and optical characterization of amorphous thin films of boron carbonitride...
Boron carbon nitride (BCN) thin films were deposited by a dual target DC and RF sputtering technique...
Boron carbon nitride (BCN) thin films were deposited by a dual target DC and RF sputtering technique...
Silicon carbon boron nitride (SiCBN) thin films were synthesized by reactive co-sputtering of silico...
The influence of substrate temperature on the composition and crystallinity of boron carbonitride (B...
Silicon carbon boron nitride (SiCBN) thin films were synthesized by reactive co-sputtering of silico...
A great part of interest has been paid for fabricating new materials with novel mechanical, optical,...
As complementary metal-oxide semiconductor (CMOS) devices shrink to smaller size, the problems relat...
Investigation of wet chemical etching Boron carbon nitride (BCN) thin films deposited by dual magnet...
Boron carbon nitride (BCN) thin films are investigated for their optical properties. BCN, is the una...
The amorphous boron-carbon-nitrogen (BCN) thin films were prepared by RF magnetron sputtering from a...
Optical properties of the Boron Carbon Nitride (BCN) thin films deposited in a multi gun radio frequ...
Boron carbon nitride (BCN) ternary compounds have similarities in the structure and difference in pr...
Thin films of boron carbon nitride (BCN) are deposited by co-sputtering of B4C (Direct Current - DC)...
We present the deposition and optical characterization of amorphous thin films of boron carbonitride...
We present the deposition and optical characterization of amorphous thin films of boron carbonitride...
Boron carbon nitride (BCN) thin films were deposited by a dual target DC and RF sputtering technique...
Boron carbon nitride (BCN) thin films were deposited by a dual target DC and RF sputtering technique...
Silicon carbon boron nitride (SiCBN) thin films were synthesized by reactive co-sputtering of silico...
The influence of substrate temperature on the composition and crystallinity of boron carbonitride (B...
Silicon carbon boron nitride (SiCBN) thin films were synthesized by reactive co-sputtering of silico...
A great part of interest has been paid for fabricating new materials with novel mechanical, optical,...
As complementary metal-oxide semiconductor (CMOS) devices shrink to smaller size, the problems relat...
Investigation of wet chemical etching Boron carbon nitride (BCN) thin films deposited by dual magnet...