Add to ORKGA new methodology for characterizing product-level failures due to the human metal model (HMM) stress is proposed and developed. This characterization framework is superior to the conventional leakage current-based approach, and it enables early wafer-level assessment of integrated circuits (ICs) HMM robustness. The new method is demonstrated in two amplifiers and is benchmarked versus the conventional leakage current method and the industry standard system-level IEC gun testing
This paper gives experimental demonstration that the method described in Part 1 of the paper, using ...
The accelerated approximate procedure developed and used herein for analysis, design and parametric ...
Characterization of human metal ESD reference discharge event and correlation of generator parameter...
A new methodology for characterizing product-level failures due to the human metal model (HMM) stres...
International audienceA new setup for generating a Human Metal Model compliant waveform with a TLP i...
An on-wafer human metal model ESD measurement setup with voltage and current waveform measurement ca...
Passing voltage levels measured from the human metalmodel tester are correlated with the failure cur...
Passing voltage levels measured from the human metal model tester are correlated with the failure cu...
The semiconductor technology development requires a full understanding of material implications at t...
Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip dama...
Reliability, besides the performance, is one of the important key factors of success of any technolo...
This thesis consists of two sections. In Section 1, the objective is to reveal the reasons for the p...
Electrostatic Discharges (ESD) is a significant hazard to electronic components and systems. Based o...
Electrostatic charges can be generated everywhere. When they are discharged through semiconductor de...
Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip dama...
This paper gives experimental demonstration that the method described in Part 1 of the paper, using ...
The accelerated approximate procedure developed and used herein for analysis, design and parametric ...
Characterization of human metal ESD reference discharge event and correlation of generator parameter...
A new methodology for characterizing product-level failures due to the human metal model (HMM) stres...
International audienceA new setup for generating a Human Metal Model compliant waveform with a TLP i...
An on-wafer human metal model ESD measurement setup with voltage and current waveform measurement ca...
Passing voltage levels measured from the human metalmodel tester are correlated with the failure cur...
Passing voltage levels measured from the human metal model tester are correlated with the failure cu...
The semiconductor technology development requires a full understanding of material implications at t...
Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip dama...
Reliability, besides the performance, is one of the important key factors of success of any technolo...
This thesis consists of two sections. In Section 1, the objective is to reveal the reasons for the p...
Electrostatic Discharges (ESD) is a significant hazard to electronic components and systems. Based o...
Electrostatic charges can be generated everywhere. When they are discharged through semiconductor de...
Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip dama...
This paper gives experimental demonstration that the method described in Part 1 of the paper, using ...
The accelerated approximate procedure developed and used herein for analysis, design and parametric ...
Characterization of human metal ESD reference discharge event and correlation of generator parameter...