ZnMgO thin films were grown by Molecular Beam Epitaxy on closely-lattice-matched MgO substrates with a Radio-Frequency (RF) generated oxygen plasma. The impact on the cubic ZnMgO of oxygen flow rate and applied RF power was investigated under a high vacuum condition (1E-6 Torr). Optical Emission Spectroscopy identified active species in the plasma including O, O+, and O2+. The emission intensity of these species was compared at oxygen flow rates ranging from 0.5 sccm to 2.5 sccm and applied RF powers from 150 W to 500 W. Plasma composition at operating conditions was determined by correlating changes in optical emission to changes in relative concentration of active species in the plasma. Atomic Force Microscopy and profilometry characteriz...
Cubic ZnMgO films were grown by plasma-enhanced molecular beam epitaxy on MgO substrates. Interdigit...
Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to explorat...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...
ZnMgO thin films were grown by Molecular Beam Epitaxy on closely-lattice-matched MgO substrates with...
ZnMgO thin films were grown by Molecular Beam Epitaxy on closely-lattice-matched MgO substrates with...
Cubic Zn1-xMgxO thin films were produced by Plasma-Enhanced Molecular Beam Epitaxy. Oxygen flow rate...
ZnO thin films were epitaxially grown on Zn-polar (0001) ZnO substrates by plasma-assisted molecular...
ZnO thin films were epitaxially grown on Zn-polar (0001) ZnO substrates by plasma-assisted molecular...
ZnO thin films were epitaxially grown on Zn-polar (0001) ZnO substrates by plasma-assisted molecular...
We studied the effects of a varying O$ flow rate on the growth of ZnO(0001) and ZnO(000-1) layers on...
Single-phase, high band gap energy Zn0.5Mg0.5O films were grown under oxygen pressure, using pulse l...
Abstract: MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, th...
Pulsed laser deposition technique was used to prepare the ZnMgO thin films on c-sapphire substrate a...
We report on the heteroepitaxial growth of high-quality single crystal cubic ZnxMg1-xO and NiyMg1-yO...
Heteroepitaxial ZnxMg1-xO thin films were grown on lattice-matched MgO (100) substrates using radiof...
Cubic ZnMgO films were grown by plasma-enhanced molecular beam epitaxy on MgO substrates. Interdigit...
Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to explorat...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...
ZnMgO thin films were grown by Molecular Beam Epitaxy on closely-lattice-matched MgO substrates with...
ZnMgO thin films were grown by Molecular Beam Epitaxy on closely-lattice-matched MgO substrates with...
Cubic Zn1-xMgxO thin films were produced by Plasma-Enhanced Molecular Beam Epitaxy. Oxygen flow rate...
ZnO thin films were epitaxially grown on Zn-polar (0001) ZnO substrates by plasma-assisted molecular...
ZnO thin films were epitaxially grown on Zn-polar (0001) ZnO substrates by plasma-assisted molecular...
ZnO thin films were epitaxially grown on Zn-polar (0001) ZnO substrates by plasma-assisted molecular...
We studied the effects of a varying O$ flow rate on the growth of ZnO(0001) and ZnO(000-1) layers on...
Single-phase, high band gap energy Zn0.5Mg0.5O films were grown under oxygen pressure, using pulse l...
Abstract: MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, th...
Pulsed laser deposition technique was used to prepare the ZnMgO thin films on c-sapphire substrate a...
We report on the heteroepitaxial growth of high-quality single crystal cubic ZnxMg1-xO and NiyMg1-yO...
Heteroepitaxial ZnxMg1-xO thin films were grown on lattice-matched MgO (100) substrates using radiof...
Cubic ZnMgO films were grown by plasma-enhanced molecular beam epitaxy on MgO substrates. Interdigit...
Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to explorat...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...