Add to ORKGElectrostatic discharge (ESD) performance of the bottom-contact organic thin-film transistors (OTFT) is investigated experimentally for the first time using the transmission line pulsing technique. The failure currents and leakage currents of OTFTs having different channel lengths and finger structures are characterized. Physical insights and measured data are offered to explain the failure of these devices at relatively low ESD stress level. © 2013 IEEE
Electrostatic discharge (ESD) is the momentary electric current that flows between two objects of di...
It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave s...
Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip dama...
Electrostatic discharge (ESD) performance of the bottom-contact organic thin-film transistors (OTFT)...
Low-voltage pentacene-based organic thin-film transistors (OTFTs) are characterized for the first ti...
Low-voltage pentacene-based organic thin-film transistors (OTFTs) are characterized for the first ti...
Low-voltage, pentacene-based organic thin-film transistors (OTFTs) are characterized under the elect...
Detailed physical insight into the ESD behavior and unique failure mechanisms of Pentacene Organic T...
Abstract—In this work, wafer level TLP testing is applied to amorphous indium–gallium–zinc–oxide (a-...
Electrostatic discharge robustness of promising nano-devices, the gate-all-around nanowire field-eff...
This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse o...
The electrostatic discharge (ESD) induced failure is characterized for evaluating the yield and stab...
Conventional CMOS technologies require high production costs, which are largely due to masks product...
In this paper, for the first time Transmission Line Model (TLM) characterization is used to analyze ...
In this paper, for the first time Transmission Line Model (TLM) characterization is used to analyze ...
Electrostatic discharge (ESD) is the momentary electric current that flows between two objects of di...
It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave s...
Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip dama...
Electrostatic discharge (ESD) performance of the bottom-contact organic thin-film transistors (OTFT)...
Low-voltage pentacene-based organic thin-film transistors (OTFTs) are characterized for the first ti...
Low-voltage pentacene-based organic thin-film transistors (OTFTs) are characterized for the first ti...
Low-voltage, pentacene-based organic thin-film transistors (OTFTs) are characterized under the elect...
Detailed physical insight into the ESD behavior and unique failure mechanisms of Pentacene Organic T...
Abstract—In this work, wafer level TLP testing is applied to amorphous indium–gallium–zinc–oxide (a-...
Electrostatic discharge robustness of promising nano-devices, the gate-all-around nanowire field-eff...
This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse o...
The electrostatic discharge (ESD) induced failure is characterized for evaluating the yield and stab...
Conventional CMOS technologies require high production costs, which are largely due to masks product...
In this paper, for the first time Transmission Line Model (TLM) characterization is used to analyze ...
In this paper, for the first time Transmission Line Model (TLM) characterization is used to analyze ...
Electrostatic discharge (ESD) is the momentary electric current that flows between two objects of di...
It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave s...
Electrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip dama...