We have observed new combination modes in the range from 1650 to 2300 cm-1 in single-(SLG), bi-, few-layer and incommensurate bilayer graphene (IBLG) on silicon dioxide substrates. A peak at ∼1860 cm -1 (iTALO-) is observed due to a combination of the in-plane transverse acoustic (iTA) and the longitudinal optical (LO) phonons. The intensity of this peak decreases with increasing number of layers and this peak is absent for bulk graphite. The overtone of the out-of-plane transverse optical (oTO) phonon at ∼1750 cm-1, also called the M band, is suppressed for both SLG and IBLG. In addition, two previously unidentified modes at ∼2200 and ∼1880 cm-1 are observed in SLG. The 2220 cm-1 (1880 cm-1) mode is tentatively assigned to the combination ...
Two new Raman modes below 100 cm<sup>–1</sup> are observed in twisted bilayer graphene grown by chem...
Bilayer graphene with a twist angle θ between the layers generates a superlattice structure known as...
The quest for materials capable of realizing the next generation of electronic and photonic devices ...
We have observed new combination modes in the range from 1650 to 2300 cm-1 in single-(SLG), bi-, few...
We have observer new combination modes in the range from 1650 to 2300 cm(-1) in single-(SLG), bi-, f...
Stacking disorder will significantly modify the optical properties and interlayer coupling stretch o...
The double resonance Raman spectra of the overtone of the out-of-plane tangential optical (oTO) phon...
Stacking disorder will significantly modify the optical properties and interlayer coupling stretch o...
We investigate two high frequency Raman overtone and combination modes of graphene named 2D' and 2D ...
The stacking disorder will significantly modify the optical properties and interlayer coupling stret...
We report the observation of layer-breathing mode (LBM) vibrations in few-layer graphene (FLG) sampl...
We report on multiphonon Raman scattering in graphene samples. Higher-order combination modes involv...
ABSTRACT: Two new Raman modes below 100 cm−1 are observed in twisted bilayer graphene grown by chemi...
Two new Raman modes below 100 cm(-1) are observed in twisted bilayer graphene grown by chemical vapo...
The symmetry group analysis is applied to classify the phonon modes of N-stacked graphene layers (NS...
Two new Raman modes below 100 cm<sup>–1</sup> are observed in twisted bilayer graphene grown by chem...
Bilayer graphene with a twist angle θ between the layers generates a superlattice structure known as...
The quest for materials capable of realizing the next generation of electronic and photonic devices ...
We have observed new combination modes in the range from 1650 to 2300 cm-1 in single-(SLG), bi-, few...
We have observer new combination modes in the range from 1650 to 2300 cm(-1) in single-(SLG), bi-, f...
Stacking disorder will significantly modify the optical properties and interlayer coupling stretch o...
The double resonance Raman spectra of the overtone of the out-of-plane tangential optical (oTO) phon...
Stacking disorder will significantly modify the optical properties and interlayer coupling stretch o...
We investigate two high frequency Raman overtone and combination modes of graphene named 2D' and 2D ...
The stacking disorder will significantly modify the optical properties and interlayer coupling stret...
We report the observation of layer-breathing mode (LBM) vibrations in few-layer graphene (FLG) sampl...
We report on multiphonon Raman scattering in graphene samples. Higher-order combination modes involv...
ABSTRACT: Two new Raman modes below 100 cm−1 are observed in twisted bilayer graphene grown by chemi...
Two new Raman modes below 100 cm(-1) are observed in twisted bilayer graphene grown by chemical vapo...
The symmetry group analysis is applied to classify the phonon modes of N-stacked graphene layers (NS...
Two new Raman modes below 100 cm<sup>–1</sup> are observed in twisted bilayer graphene grown by chem...
Bilayer graphene with a twist angle θ between the layers generates a superlattice structure known as...
The quest for materials capable of realizing the next generation of electronic and photonic devices ...