Add to ORKGThis paper provides a review of most recent cycle of studies of NLDMOS-based power arrays, their operation in ESD regimes, self-protection capability as well as the methods and measures to improve the array robustness on the device structure, layout architecture and array composition levels. Effective practices of improving ESD robustness at the cell level and backend level are presented followed by topology optimization. Discussion is based upon ESD characterization supported both by device-circuit mixed-mode and 2.5D array level simulations data. © 2011 Elsevier Ltd. All rights reserved
Electrostatic discharge (ESD) robustness of LDMOS (laterally diffused MOS) devices is found to be hi...
In this work we present results concerning ESD protection structures for 20 V and 40 V power supply ...
International audienceIn this paper, using extensive TCAD simulations and measurement results, we an...
This paper provides a review of most recent cycle of studies of NLDMOS-based power arrays, their ope...
The self-protection capability of arrays as a layout dependent parameter have been studied using a n...
The electrostatic-discharge (ESD) protection capability of HV nLDMOS devices with the source-side en...
The electrostatic-discharge (ESD) protection capability of HV nLDMOS devices with the source-side en...
In this paper, the electrostatic-discharge (ESD) robustness improvement by modulating the drain-side...
A comprehensive methodology for synthesizing robust ESD performance in highly sensitive high voltage...
This paper introduces a new FoM (figure of merit) to evaluate the overall performance of ESD and LNA...
Electronic systems need to be protected against electrostatic discharge (ESD) events. One way is des...
[[abstract]]In the power management applications, the lateral double-diffusion MOS (LDMOS) transisto...
Electrostatic discharge (ESD) robustness of LDMOS (laterally diffused MOS) devices is found to be hi...
This paper introduces a new FoM (figure of merit) to evaluate the overall performance of ESD and LNA...
Robustness performance is one of the most important concerns in the design of ESD (Electro-Static Di...
Electrostatic discharge (ESD) robustness of LDMOS (laterally diffused MOS) devices is found to be hi...
In this work we present results concerning ESD protection structures for 20 V and 40 V power supply ...
International audienceIn this paper, using extensive TCAD simulations and measurement results, we an...
This paper provides a review of most recent cycle of studies of NLDMOS-based power arrays, their ope...
The self-protection capability of arrays as a layout dependent parameter have been studied using a n...
The electrostatic-discharge (ESD) protection capability of HV nLDMOS devices with the source-side en...
The electrostatic-discharge (ESD) protection capability of HV nLDMOS devices with the source-side en...
In this paper, the electrostatic-discharge (ESD) robustness improvement by modulating the drain-side...
A comprehensive methodology for synthesizing robust ESD performance in highly sensitive high voltage...
This paper introduces a new FoM (figure of merit) to evaluate the overall performance of ESD and LNA...
Electronic systems need to be protected against electrostatic discharge (ESD) events. One way is des...
[[abstract]]In the power management applications, the lateral double-diffusion MOS (LDMOS) transisto...
Electrostatic discharge (ESD) robustness of LDMOS (laterally diffused MOS) devices is found to be hi...
This paper introduces a new FoM (figure of merit) to evaluate the overall performance of ESD and LNA...
Robustness performance is one of the most important concerns in the design of ESD (Electro-Static Di...
Electrostatic discharge (ESD) robustness of LDMOS (laterally diffused MOS) devices is found to be hi...
In this work we present results concerning ESD protection structures for 20 V and 40 V power supply ...
International audienceIn this paper, using extensive TCAD simulations and measurement results, we an...