Density functional theory calculations are used to estimate the energy of interstitial oxygen (Oi) released from tin-doped indium oxide (ITO). The currently accepted explanation of defect clusters\u27 irreducibility is based on different arrangements of doping atoms around Oi. In the present contribution we demonstrate that this concept has only a limited domain of applicability and explains the relative stability of different defect clusters with the same and fixed Sn:Oi ratio. To describe practically the important case of ITO treatment under strong reduction conditions another limiting case of varying Sn:Oi ratio is considered. It is found that in this particular case local coordination of doping atoms around Oi plays only a minor role. T...
We investigate the impact of tin doping on the formation of vacancy-oxygen pairs ( VO or A-centers) ...
First-principles simulations show that Pt single atoms and dimers are stabilized by tin doping in in...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...
Density functional theory calculations are used to estimate the energy of interstitial oxygen (Oi) r...
Density functional theory calculations are used to estimate the energy of interstitial oxygen (O(i))...
Intrinsic point defects in indium oxide, including vacancies, interstitials as well as antisites, ar...
We present a consistent interatomic force field for indium sesquioxide (In2O3) and tin dioxide (SnO2...
Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Althoug...
The defect structure of bulk and nano-indium-tin oxide was investigated by a combination of experime...
The structural, vibrational and electronic properties of small clusters of indium oxide (InmOn; m; n...
A comparative study on the structure and stability of oxygen defects in ZnO is presented. By means o...
Using first principles using density functional theory (DFT), DFT calculations with a local exchange...
Experimental and theoretical techniques are used to investigate the impact of tin doping on the form...
Indium oxide (IO) and indium tin oxide (ITO) are important metal oxide materials with a wide array o...
The electronic structure and magnetic properties of In2O3 with four kinds of intrinsic point defects...
We investigate the impact of tin doping on the formation of vacancy-oxygen pairs ( VO or A-centers) ...
First-principles simulations show that Pt single atoms and dimers are stabilized by tin doping in in...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...
Density functional theory calculations are used to estimate the energy of interstitial oxygen (Oi) r...
Density functional theory calculations are used to estimate the energy of interstitial oxygen (O(i))...
Intrinsic point defects in indium oxide, including vacancies, interstitials as well as antisites, ar...
We present a consistent interatomic force field for indium sesquioxide (In2O3) and tin dioxide (SnO2...
Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Althoug...
The defect structure of bulk and nano-indium-tin oxide was investigated by a combination of experime...
The structural, vibrational and electronic properties of small clusters of indium oxide (InmOn; m; n...
A comparative study on the structure and stability of oxygen defects in ZnO is presented. By means o...
Using first principles using density functional theory (DFT), DFT calculations with a local exchange...
Experimental and theoretical techniques are used to investigate the impact of tin doping on the form...
Indium oxide (IO) and indium tin oxide (ITO) are important metal oxide materials with a wide array o...
The electronic structure and magnetic properties of In2O3 with four kinds of intrinsic point defects...
We investigate the impact of tin doping on the formation of vacancy-oxygen pairs ( VO or A-centers) ...
First-principles simulations show that Pt single atoms and dimers are stabilized by tin doping in in...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...