Evaluation Of Nanowire Field-Effect Transistors For Electrostatic Discharge (Esd) Applications
- Liu, Wen
- Liou, Juin J.
- Li, You
- Chung, J.
- Jeong, Y. H.
DOIAbstract
Electrostatic discharge robustness of promising nano-devices, the gate-all-around nanowire field-effect transistor and double-gated poly-Si nanowire thin-film transistor, were characterized and compared with FinFETs for the first time using the transmission line pulsing (TLP) technique. Failure analysis of the devices was done by electrical characterization and microscopy inspection. © 2010 IEEE
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