The locations and electronic structures of dilute Mn2+ and Er3+ impurity ions in silicon are studied using the Hartree-Fock Cluster procedure including relaxation in the positions of neighbors of the impurity ions. Three likely sites are studied, hexagonal intersititial (H i), tetrahedral interstitial (Ti) and substitutional (S). Of these, Hi is found to be unstable and S has larger binding energy than Ti, the latter being found to be the occupied site by channeling measurements. This is also supported by the agreement between our theoretical result and experiment for the Mn2+ ion magnetic hyperfine constant. A possible reason for the observation of the Ti site experimentally is suggested. © 2008 American Institute of Physics
The effects of thermal annealing and codoped impurities including carbon, nitrogen, oxygen, and fluo...
We present an accurate first-principles study of magnetism and energetics of single Mn impurities an...
Computational investigations on semiconductor (silicon or germanium) clusters (Sinor Gen) in combina...
The locations and electronic structures of dilute Mn2+ and Er3+ impurity ions in silicon are studied...
The electronic structures of the dilute transition metal (TM) impurities, V2+, Cr+, Mn2+, and Mn0 in...
Results are presented of a Hartree-Fock cluster study of interstitial Ti, V, Cr, and Mn impurities i...
Results are presented of a Hartree-Fock cluster study of interstitial Ti, V, Cr, and Mn impurities i...
The importance of hyperfine interactions in the Erbium-Silicon system is underscored by our first-pr...
The importance of hyperfine interactions in the Erbium-Silicon system is underscored by our first-pr...
By using ab initio electronic structure calculations within density functional theory, we study the ...
Using first-principles methods, we systematically study the mechanism of defect formation and electr...
The application of molecular ab initio methods to investigate the electronic structure of localized ...
A first-principles spin-polarised local density functional cluster method is used to explore the str...
We report on the structural, electronic, and magnetic properties of manganese-doped silicon clusters...
The electrical levels of various combinations of transition metal-H defects in Si are calculated usi...
The effects of thermal annealing and codoped impurities including carbon, nitrogen, oxygen, and fluo...
We present an accurate first-principles study of magnetism and energetics of single Mn impurities an...
Computational investigations on semiconductor (silicon or germanium) clusters (Sinor Gen) in combina...
The locations and electronic structures of dilute Mn2+ and Er3+ impurity ions in silicon are studied...
The electronic structures of the dilute transition metal (TM) impurities, V2+, Cr+, Mn2+, and Mn0 in...
Results are presented of a Hartree-Fock cluster study of interstitial Ti, V, Cr, and Mn impurities i...
Results are presented of a Hartree-Fock cluster study of interstitial Ti, V, Cr, and Mn impurities i...
The importance of hyperfine interactions in the Erbium-Silicon system is underscored by our first-pr...
The importance of hyperfine interactions in the Erbium-Silicon system is underscored by our first-pr...
By using ab initio electronic structure calculations within density functional theory, we study the ...
Using first-principles methods, we systematically study the mechanism of defect formation and electr...
The application of molecular ab initio methods to investigate the electronic structure of localized ...
A first-principles spin-polarised local density functional cluster method is used to explore the str...
We report on the structural, electronic, and magnetic properties of manganese-doped silicon clusters...
The electrical levels of various combinations of transition metal-H defects in Si are calculated usi...
The effects of thermal annealing and codoped impurities including carbon, nitrogen, oxygen, and fluo...
We present an accurate first-principles study of magnetism and energetics of single Mn impurities an...
Computational investigations on semiconductor (silicon or germanium) clusters (Sinor Gen) in combina...