Robust and novel devices called High Holding, Low-Voltage-Trigger Silicon Controlled Rectifiers (HH-LVTSCRs) for Electrostatic Discharge (ESD) protection of integrated circuits (ICs) are designed, fabricated and characterized. The S-type current-voltage (I-V) characteristics of the HH-LVTSCRs are adjustable to different operating conditions by changing the device dimensions and terminal interconnections. Experimental results demonstrate that HH-LVTSCRs with a multiple-finger layout render high levels of ESD protection per unit area, applicable in the design of ICs with stringent ESD protection requirements of over 15 kV IEC
In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection c...
A novel and robust un-assisted low-trigger and high-holding voltage silicon controlled rectifier (uS...
Electrostatic discharge (ESD) protection devices fabricated in a low-voltage CMOS process for commun...
Robust and novel devices called High Holding, Low-Voltage-Trigger Silicon Controlled Rectifiers (HH-...
Robust and novel devices called High Holding, Low-Voltage-Trigger Silicon Controlled Rectifiers (HH-...
Robust and novel devices called High Holding, Low-Voltage-Trigger Silicon Controlled Rectifiers (HH-...
Robust and novel devices called high-holding low-voltage trigger silicon controlled rectifiers (HH-L...
Silicon controlled rectifiers (SCRs) are frequently used to build on-chip electrostatic discharge (E...
A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR,...
Silicon-controlled rectifiers (SCRs) are frequently used to build on-chip electrostatic discharge (E...
Silicon controlled rectifiers (SCRs) are frequently used to build on-chip electrostatic discharge (E...
Silicon-controlled rectifiers (SCRs) are frequently used to, build on-chip electrostatic discharge (...
A High- Holding- Low- Trigger- Voltage- Silicon-Controlled- Rectifier (HHLVTSCR) is fabricated in a ...
A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD p...
A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD p...
In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection c...
A novel and robust un-assisted low-trigger and high-holding voltage silicon controlled rectifier (uS...
Electrostatic discharge (ESD) protection devices fabricated in a low-voltage CMOS process for commun...
Robust and novel devices called High Holding, Low-Voltage-Trigger Silicon Controlled Rectifiers (HH-...
Robust and novel devices called High Holding, Low-Voltage-Trigger Silicon Controlled Rectifiers (HH-...
Robust and novel devices called High Holding, Low-Voltage-Trigger Silicon Controlled Rectifiers (HH-...
Robust and novel devices called high-holding low-voltage trigger silicon controlled rectifiers (HH-L...
Silicon controlled rectifiers (SCRs) are frequently used to build on-chip electrostatic discharge (E...
A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR,...
Silicon-controlled rectifiers (SCRs) are frequently used to build on-chip electrostatic discharge (E...
Silicon controlled rectifiers (SCRs) are frequently used to build on-chip electrostatic discharge (E...
Silicon-controlled rectifiers (SCRs) are frequently used to, build on-chip electrostatic discharge (...
A High- Holding- Low- Trigger- Voltage- Silicon-Controlled- Rectifier (HHLVTSCR) is fabricated in a ...
A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD p...
A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD p...
In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection c...
A novel and robust un-assisted low-trigger and high-holding voltage silicon controlled rectifier (uS...
Electrostatic discharge (ESD) protection devices fabricated in a low-voltage CMOS process for commun...