Kinetics Of Oh Chemiluminescence In The Presence Of Silicon

Ultraviolet emission from the OH(A-X) transition near 307 nm has been measured in a shock-tube for T = 1050-1400 K and P ≈ 1.2 atm. Experimental mixtures of H2/SiH4/O2/Ar and kinetics calculations were used to identify the elementary reaction forming electronically excited OH (OH*) in a Si-containing environment and directly measure its absolute rate coefficient. The primary Si-containing reaction found to form OH* is (R0)SiH + O2 = OH* + SiOwith a rate expression ofk0 = 1.5 × 107 exp (+ 16.4 kcal/RT) ± 2.3 × 1010 cm 3 mol -1 s -1This work provides insights into the mechanisms of combustion processes involving silicon. © 2006 Elsevier B.V. All rights reserved