Add to ORKGThe hot carrier effects on the 0.25 μm high voltage LDMOS has been examined by the accelerated stress experiment. Although the model parameters changed slightly, the switching performances degraded significantly, which have been simulated with the compact models extracted from the test devices by ICCAP. A full bridge DC-DC converter with the compact models was proposed in Cadence SpectreRF. The simulated results show that the efficiency of the full bridge DC-DC converter degraded significantly due to the hot carrier effects. © 2006
International audienceThe hot-carrier (HC) degradation of short-channel n-FinFETs is investigated. T...
We present and validate a physics-basedmodel for hot-carrier degradation. The model is based on a th...
International audienceThe transistor performances and hot-carrier reliability in n-MOSFETs are inves...
The hot carrier effects on the 0.25 μm high voltage LDMOS has been examined by the accelerated stres...
The hot carrier effects on the 0.25 mu m high voltage LDMOS has been examined by the accelerated str...
[[abstract]]LDMOSFETs have been used widely in many kinds of power electrical products. However, fur...
Laterally double-diffused MOS (LDMOS) transistors subjected to hot-electron stress effects have been...
Laterally double-diffused MOS (LDMOS) transistors subjected to hot-electron stress effects have been...
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range...
An analysis of MOS transistor hot carrier degradation is presented, based upon experimental, simulat...
The impact of hot-carrier (HC) stress on CMOS inverters at 77K was examined as a function of tempera...
Nowadays, there is an increasing need to develop, reliable and low-cost power devices able to withst...
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOS...
Among the large variety of semiconductor devices addressed to power applications, laterally diffused...
This paper investigates the hot-carrier-induced performance degradation in a cascode low-noise ampli...
International audienceThe hot-carrier (HC) degradation of short-channel n-FinFETs is investigated. T...
We present and validate a physics-basedmodel for hot-carrier degradation. The model is based on a th...
International audienceThe transistor performances and hot-carrier reliability in n-MOSFETs are inves...
The hot carrier effects on the 0.25 μm high voltage LDMOS has been examined by the accelerated stres...
The hot carrier effects on the 0.25 mu m high voltage LDMOS has been examined by the accelerated str...
[[abstract]]LDMOSFETs have been used widely in many kinds of power electrical products. However, fur...
Laterally double-diffused MOS (LDMOS) transistors subjected to hot-electron stress effects have been...
Laterally double-diffused MOS (LDMOS) transistors subjected to hot-electron stress effects have been...
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range...
An analysis of MOS transistor hot carrier degradation is presented, based upon experimental, simulat...
The impact of hot-carrier (HC) stress on CMOS inverters at 77K was examined as a function of tempera...
Nowadays, there is an increasing need to develop, reliable and low-cost power devices able to withst...
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOS...
Among the large variety of semiconductor devices addressed to power applications, laterally diffused...
This paper investigates the hot-carrier-induced performance degradation in a cascode low-noise ampli...
International audienceThe hot-carrier (HC) degradation of short-channel n-FinFETs is investigated. T...
We present and validate a physics-basedmodel for hot-carrier degradation. The model is based on a th...
International audienceThe transistor performances and hot-carrier reliability in n-MOSFETs are inves...