Add to ORKGHigh EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and high conversion efficiency. This offers a viable path towards successful realization of EUV lithography for the next generation semiconductor devices. © 2007 Optical Society of America
We have previously reported encouraging results with a new type of laser plasma source. As a radiati...
EUV lithography requires a high-efficiency light source at 13nm that is free from debris. Our mass-l...
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources co...
High EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and hig...
High EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and hig...
High EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and hig...
High EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and hig...
Light sources based on laser plasmas using tin as target material are known to provide high conversi...
An overview is given of the progress in the studies on a tin material limited-mass target which has ...
Tin-doped droplet target has been integrated with several lasers including high power high repetitio...
Tin-doped droplet target has been integrated with several lasers including high power high repetitio...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
We have previously reported encouraging results with a new type of laser plasma source. As a radiati...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
We have previously reported encouraging results with a new type of laser plasma source. As a radiati...
EUV lithography requires a high-efficiency light source at 13nm that is free from debris. Our mass-l...
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources co...
High EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and hig...
High EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and hig...
High EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and hig...
High EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and hig...
Light sources based on laser plasmas using tin as target material are known to provide high conversi...
An overview is given of the progress in the studies on a tin material limited-mass target which has ...
Tin-doped droplet target has been integrated with several lasers including high power high repetitio...
Tin-doped droplet target has been integrated with several lasers including high power high repetitio...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
We have previously reported encouraging results with a new type of laser plasma source. As a radiati...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
We have previously reported encouraging results with a new type of laser plasma source. As a radiati...
EUV lithography requires a high-efficiency light source at 13nm that is free from debris. Our mass-l...
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources co...