The most pressing technical issue for the success of EUV lithography is the provision of a high repetition-rate source having sufficient brightness, lifetime, and with sufficiently low off-band heating and particulate emissions characteristics to be technically and economically viable. We review current laser plasma approaches and achievements, with the objective of projecting future progress and identifying possible limitations and issues requiring further investigation
A high repetition-rate laser plasma source, possessing distinct radiation and particle emission char...
The development of a laser-plasma EUV line emission source based on frozen water droplet targets whi...
An overview is given of the progress in the studies on a tin material limited-mass target which has ...
The most pressing technical issue for the success of EUV lithography is the provision of a high repe...
While huge progress has been achieved for EUVL system design and multilayer optics during the last y...
We have been developing an EUV light source by laser-produced plasma for the use of EUV lithography ...
This paper describes the development of laser produced plasma (LPP) technology as an EUV source for ...
Extreme ultraviolet lithography (EUVL) is under discussion to be implemented in the production of ch...
The liquid-xenon-jet laser-plasma source is one of the extreme-ultraviolet (EUV) source technologies...
As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature siz...
Extreme Ultra-Violet (EUV) lithography is most likely to be used for the production of semi-conducto...
Laser-produced plasmas are source candidates for EUV lithography. The radiation angular distribution...
As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature siz...
Extreme ultraviolet (EUV) lithography tools will need a debris free source with a collectable radiat...
Intense visible and ultraviolet sources, both incoherent and coherent, have been used in a variety o...
A high repetition-rate laser plasma source, possessing distinct radiation and particle emission char...
The development of a laser-plasma EUV line emission source based on frozen water droplet targets whi...
An overview is given of the progress in the studies on a tin material limited-mass target which has ...
The most pressing technical issue for the success of EUV lithography is the provision of a high repe...
While huge progress has been achieved for EUVL system design and multilayer optics during the last y...
We have been developing an EUV light source by laser-produced plasma for the use of EUV lithography ...
This paper describes the development of laser produced plasma (LPP) technology as an EUV source for ...
Extreme ultraviolet lithography (EUVL) is under discussion to be implemented in the production of ch...
The liquid-xenon-jet laser-plasma source is one of the extreme-ultraviolet (EUV) source technologies...
As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature siz...
Extreme Ultra-Violet (EUV) lithography is most likely to be used for the production of semi-conducto...
Laser-produced plasmas are source candidates for EUV lithography. The radiation angular distribution...
As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature siz...
Extreme ultraviolet (EUV) lithography tools will need a debris free source with a collectable radiat...
Intense visible and ultraviolet sources, both incoherent and coherent, have been used in a variety o...
A high repetition-rate laser plasma source, possessing distinct radiation and particle emission char...
The development of a laser-plasma EUV line emission source based on frozen water droplet targets whi...
An overview is given of the progress in the studies on a tin material limited-mass target which has ...