We are developing a mass-limited, laser plasma target concept that utilizes excited state transitions in tin ions as the source of 13.5 nm radiation, offering in-band conversion efficiencies greater than 1%. The ultimate objective of this EUV source strategy is the utilization of a target that is completely ionized by the laser. To determine the viability of this source for EUVL, we are making extensive measurements of the debris emanating from the target. Here we report on some of these measurements. Also under investigation are various methods of debris mitigation. We have previously shown the effectiveness of electrostatic fields for repelling ions from mass-limited targets, demonstrating improvements in multilayer mirror lifetimes in ex...
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources co...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
We are developing a mass-limited, laser plasma target concept that utilizes excited state transition...
We describe studies of the debris produced from a high-repetition-rate laser plasma EUVL source base...
We describe studies of the debris produced from a high-repetition-rate laser plasma EUVL source base...
The EUVL collector mirror reflectivity degradation can be measured as erosion of the mirror surface ...
Extreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under developmen...
Extreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under developmen...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
Light sources based on laser plasmas using tin as target material are known to provide high conversi...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
An overview is given of the progress in the studies on a tin material limited-mass target which has ...
Tin-doped droplet target has been integrated with several lasers including high power high repetitio...
Tin-doped droplet target has been integrated with several lasers including high power high repetitio...
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources co...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
We are developing a mass-limited, laser plasma target concept that utilizes excited state transition...
We describe studies of the debris produced from a high-repetition-rate laser plasma EUVL source base...
We describe studies of the debris produced from a high-repetition-rate laser plasma EUVL source base...
The EUVL collector mirror reflectivity degradation can be measured as erosion of the mirror surface ...
Extreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under developmen...
Extreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under developmen...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
Light sources based on laser plasmas using tin as target material are known to provide high conversi...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
An overview is given of the progress in the studies on a tin material limited-mass target which has ...
Tin-doped droplet target has been integrated with several lasers including high power high repetitio...
Tin-doped droplet target has been integrated with several lasers including high power high repetitio...
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources co...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...