Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputtering system using a SiC target. Films with various compositions were deposited on to silicon substrate by changing the N2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties of the SiCN films. Surface morphology of the films was characterized by using Atomic Force Microscope. X-ray Photoelectron Spectroscopy (XPS) data indicated that the chemical status is highly sensitive to the nitrogen ratios during sputtering. © 2003 Elsevier B.V. All rights reserved
Thin films of silicon carbide nitride (SiCN) have been prepared by reactive radioactive frequency (r...
SiCN films have been produced along the tie line SiC–Si3N4, SiC–C3N4 and Si3N4–C3N4 by means of reac...
Silicon carbide films were deposited onto crystalline silicon substrates from a sintered SiC target ...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
With the rapid increase in miniaturization of mechanical components, the need for a hard, protective...
Thin films of silicon carbide nitride (SiCxNy) were deposited in an r.f. magnetron sputtering system...
Thin films of silicon carbide nitride (SiC x N y ) were deposited in an r.f. magnetron sputtering sy...
Electrical studies on amorphous silicon carbide nitride films were presented. Thin films of silicon ...
In this work we report the deposition and characterization of amorphous thin films of silicon boron ...
In this work we report the deposition and characterization of amorphous thin films of silicon boron ...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
Thin films of amorphous silicon carbide nitride (a- SiCx Ny) were deposited in a rf magnetron sputte...
Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of ...
Thin films of silicon carbide nitride (SiCN) have been prepared by reactive radioactive frequency (r...
Thin films of silicon carbide nitride (SiCN) have been prepared by reactive radioactive frequency (r...
SiCN films have been produced along the tie line SiC–Si3N4, SiC–C3N4 and Si3N4–C3N4 by means of reac...
Silicon carbide films were deposited onto crystalline silicon substrates from a sintered SiC target ...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
With the rapid increase in miniaturization of mechanical components, the need for a hard, protective...
Thin films of silicon carbide nitride (SiCxNy) were deposited in an r.f. magnetron sputtering system...
Thin films of silicon carbide nitride (SiC x N y ) were deposited in an r.f. magnetron sputtering sy...
Electrical studies on amorphous silicon carbide nitride films were presented. Thin films of silicon ...
In this work we report the deposition and characterization of amorphous thin films of silicon boron ...
In this work we report the deposition and characterization of amorphous thin films of silicon boron ...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
Thin films of amorphous silicon carbide nitride (a- SiCx Ny) were deposited in a rf magnetron sputte...
Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of ...
Thin films of silicon carbide nitride (SiCN) have been prepared by reactive radioactive frequency (r...
Thin films of silicon carbide nitride (SiCN) have been prepared by reactive radioactive frequency (r...
SiCN films have been produced along the tie line SiC–Si3N4, SiC–C3N4 and Si3N4–C3N4 by means of reac...
Silicon carbide films were deposited onto crystalline silicon substrates from a sintered SiC target ...