Scr Device For Esd Protection In Sub-Micron Triple Well Silicided Cmos Processes

A High- Holding- Low- Trigger- Voltage- Silicon-Controlled- Rectifier (HHLVTSCR) is fabricated in a sub-micron triple well CMOS technology in complementary n- and p-rypes. The HHLVTSCRs occupy less area than typical Electrostatic Discharge (ESD) protection devices and the corresponding I-V characteristics are adjustable to different protection requirements. The characteristics of these devices are tuned by the appropriate choice of the internal dimensions and device interconnections. Both n- and p-type devices are characterized using the Transmission Line Pulse (TLP) technique. Comparisons between n- and p-type devices show that n-type devices perform better than p-type devices for low holding voltages (VH), but for relatively high holding voltages the p-type devices show better characteristics. Results demonstrate that ESD protection capabilities in n- and p-type devices are adequate for the design of multiple IC\u27s ESD protection schemes with very low leakage current and without latchup concerns. © 2004 IEEE