We present hard x-ray photoemission measurements from GaAs samples with a 10-Å-thick layer of AlAs buried at different depths. The intensity trend versus kinetic energy of the Al 1s signal allows extraction of the x-ray attenuation length, which we find to reach ~100 Å at a kinetic energy of 6 keV. On one sample exposed to air for several days we obtain qualitative information on the oxidation at different depth scales by exploiting the energy dependence of the attenuation length. This suggests the strong potential of hard x-ray photoemission in the nondestructive characterization of diluted materials on a depth scale interesting to modern nanotechnologie
We have determined the effective attenuation length of photoelectrons over the range of kinetic ener...
We report on the results obtained during the commissioning phase of the volume photoemission (VOLPE)...
X-ray Photoelectron Spectroscopy (XPS) plays a central role in the investigation of electronic prope...
We present hard x-ray photoemission measurements from GaAs samples with a 10-Å-thick layer of AlAs b...
: Photoelectron spectroscopy is growing in importance as a tool for characterizing not only the surf...
We demonstrate quantitative, highly bulk-sensitive x-ray photoelectron emission microscopy by analys...
The electronic properties of surfaces and buried interfaces can vary considerably in comparison to t...
We report about a proof-of-principle experiment which explores the perspectives of performing hard x...
Traditional ultraviolet/soft X-ray angle-resolved photoemission spectroscopy (ARPES) may in some cas...
We have recently performed accurate constant initial state (CIS) Al 2p photoemission experiments on ...
We report on the results obtained during the commissioning phase of the volume photoemission (VOLPE)...
Hard x-ray photoelectron spectroscopy (HAXPES) has now matured into a well-established technique as ...
We have determined the effective attenuation length of photoelectrons over the range of kinetic ener...
We report on the results obtained during the commissioning phase of the volume photoemission (VOLPE)...
X-ray Photoelectron Spectroscopy (XPS) plays a central role in the investigation of electronic prope...
We present hard x-ray photoemission measurements from GaAs samples with a 10-Å-thick layer of AlAs b...
: Photoelectron spectroscopy is growing in importance as a tool for characterizing not only the surf...
We demonstrate quantitative, highly bulk-sensitive x-ray photoelectron emission microscopy by analys...
The electronic properties of surfaces and buried interfaces can vary considerably in comparison to t...
We report about a proof-of-principle experiment which explores the perspectives of performing hard x...
Traditional ultraviolet/soft X-ray angle-resolved photoemission spectroscopy (ARPES) may in some cas...
We have recently performed accurate constant initial state (CIS) Al 2p photoemission experiments on ...
We report on the results obtained during the commissioning phase of the volume photoemission (VOLPE)...
Hard x-ray photoelectron spectroscopy (HAXPES) has now matured into a well-established technique as ...
We have determined the effective attenuation length of photoelectrons over the range of kinetic ener...
We report on the results obtained during the commissioning phase of the volume photoemission (VOLPE)...
X-ray Photoelectron Spectroscopy (XPS) plays a central role in the investigation of electronic prope...