Low temperature resistivity of germanium semiconductor

A theoretical expression for the low temperature resistivity of germanium semiconductor as a function of impurity concentration and temperature is reported. Fritzsche's data in the intermediate concentration range was used to optimize the energy constants in his equation for the resistivity. The coefficients in the three terms of his expression were calculated for different impurity concentration and an expression was developed for each coefficient with the impurity concentration as variable. Resistivity was determined from this modified equation for each of his samples in the temperature range between 0.1 K and 200 K. An agreement is found between the calculated curves and his experimental curves for the samples with impurity contents between 4.5 X 10^16 and 7.4 X 10^16 acceptors/cc. However, the data for the samples with impurity contents other than the so-called Intermediate Concentration does not fit experimental data. Fritzsche's model of impurity band conduction has to be refined or altered to account for this complicated behavior.Electrical and Computer Engineering, Department o