Near-Infrared Ge-on-Si Power Monitors Monolithically Integrated on SOI Chips
- Colace L
- Sorianello V
- Romagnoli M
- ASSANTO, GAETANO
Publication date
January 2010
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) ISSN
1041-1135Abstract
We realize and test power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide photodetectors in evaporated germanium with front-end transimpedance amplifiers. The power monitors operate with signals as small as 10nW, with errors below 0.2% and 2% at 1 and 0.1 mu W, respectively
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