We report on the first silicon-integrated 2-D light-sensitive array equipped with complementary-metal-oxide-semiconductor addressing and readout electronics and operating in the near infrared. The chip includes 64 x 8 pixels, 64 analog-to-digital converters, cancellation circuitry for dark current, and facilities for test/calibration. We describe its architecture and fabrication, its electronic and optoelectronic characterization, as well as its operation as a near-infrared camera
Photodetectors based on a Ge-on-Si platform were widely studied over the last two decades, rapidly b...
In recent years, several Ge-on-Si technologies for the fabrication of near infrared photodetectors o...
In the past two decades SiGe has been the material of choice for the realization of near infrared (N...
We report on the first silicon-integrated 2-D light-sensitive array equipped with complementary-meta...
The authors demonstrate a two-dimensional array of Si-integrated photodetectors equipped with readou...
Using a low-temperature technology for polycrystalline Ge deposition, we report on the monolithic in...
Near infrared (NIR) detectors, operating in the 1.3-1.6 mum region, are key elements in a number of ...
A novel one-dimensional array of photodetectors for the near infrared up to 1.55 mu m is reported. T...
In recent years, several Ge-on-Si technologies for the fabrication of near infrared photodetectors o...
We review near-infrared detectors in germanium grown on silicon. We discuss pn and pin photodiodes b...
we describe the NIRCAM2, i.e. the first two-dimensional array of 64x8 pixels equipped with readout e...
We describe a linear array of Ge-Si heterojunction photodiodes monolithically integrated on a comple...
Photodetectors based on a Ge-on-Si platform were widely studied over the last two decades, rapidly b...
In recent years, several Ge-on-Si technologies for the fabrication of near infrared photodetectors o...
In the past two decades SiGe has been the material of choice for the realization of near infrared (N...
We report on the first silicon-integrated 2-D light-sensitive array equipped with complementary-meta...
The authors demonstrate a two-dimensional array of Si-integrated photodetectors equipped with readou...
Using a low-temperature technology for polycrystalline Ge deposition, we report on the monolithic in...
Near infrared (NIR) detectors, operating in the 1.3-1.6 mum region, are key elements in a number of ...
A novel one-dimensional array of photodetectors for the near infrared up to 1.55 mu m is reported. T...
In recent years, several Ge-on-Si technologies for the fabrication of near infrared photodetectors o...
We review near-infrared detectors in germanium grown on silicon. We discuss pn and pin photodiodes b...
we describe the NIRCAM2, i.e. the first two-dimensional array of 64x8 pixels equipped with readout e...
We describe a linear array of Ge-Si heterojunction photodiodes monolithically integrated on a comple...
Photodetectors based on a Ge-on-Si platform were widely studied over the last two decades, rapidly b...
In recent years, several Ge-on-Si technologies for the fabrication of near infrared photodetectors o...
In the past two decades SiGe has been the material of choice for the realization of near infrared (N...