CW-laser crystallization of amorphous silicon carbon alloys has been investigated as a function of both laser power density and alloy composition. Irradiation of such alloys generally yields phase segregation into crystalline silicon and crystalline graphite, depending on the laser power density, while crystalline SiC phase can be obtained only when nearly stoichiometric amorphous silicon-carbon alloy are irradiated. (C) 1999 Published by Elsevier Science B.V. All rights reserved
The effect of laser energy density on the crystallization of hydrogenated amorphous silicon (a-Si:H)...
The solid-phase crystallization of amorphous Si films with/without a crystallization-induction (CI) ...
A nanosecond pulsed, Ytterbium doped optical fiber laser, operating at 1064 nm, has been used for la...
Hydrogenated amorphous silicon-carbon films with carbon content, x=C/(C+Si), ranging from 0.08 to 0....
Laser induced crystallization of hydrogenated amorphous silicon carbon alloy (a-Si1-xCx:H) films has...
Abstract Hydrogenated amorphous silicon–carbon films with carbon content, x=C/(C+Si), ranging from 0...
The effect of surface morphology on laser-induced crystallization of hydrogenated intrinsic amorphou...
The influence of carbon content on the crystallization process has been investigated for the excimer...
Silicon carbide SiC is a promising material for the fabrication of optoelectronic devices. In the ...
The influence of carbon content on the crystallization process has been investigated for the excimer...
This work describes tin-induced crystallization of amorphous silicon studied with Raman spectroscopy...
The effects of laser irradiation condition and deposition substrate on the laser crystallized 330 nm...
The effect of laser fluence on the crystallization of amorphous silicon irradiated by a frequency-do...
have been monitored by reflection high energy electron diffraction, Raman spectroscopy, and electron...
Les lasers rubis pulsé, YAG pulsé et balayé et CO2 continu ont été utilisés pour cristalliser des co...
The effect of laser energy density on the crystallization of hydrogenated amorphous silicon (a-Si:H)...
The solid-phase crystallization of amorphous Si films with/without a crystallization-induction (CI) ...
A nanosecond pulsed, Ytterbium doped optical fiber laser, operating at 1064 nm, has been used for la...
Hydrogenated amorphous silicon-carbon films with carbon content, x=C/(C+Si), ranging from 0.08 to 0....
Laser induced crystallization of hydrogenated amorphous silicon carbon alloy (a-Si1-xCx:H) films has...
Abstract Hydrogenated amorphous silicon–carbon films with carbon content, x=C/(C+Si), ranging from 0...
The effect of surface morphology on laser-induced crystallization of hydrogenated intrinsic amorphou...
The influence of carbon content on the crystallization process has been investigated for the excimer...
Silicon carbide SiC is a promising material for the fabrication of optoelectronic devices. In the ...
The influence of carbon content on the crystallization process has been investigated for the excimer...
This work describes tin-induced crystallization of amorphous silicon studied with Raman spectroscopy...
The effects of laser irradiation condition and deposition substrate on the laser crystallized 330 nm...
The effect of laser fluence on the crystallization of amorphous silicon irradiated by a frequency-do...
have been monitored by reflection high energy electron diffraction, Raman spectroscopy, and electron...
Les lasers rubis pulsé, YAG pulsé et balayé et CO2 continu ont été utilisés pour cristalliser des co...
The effect of laser energy density on the crystallization of hydrogenated amorphous silicon (a-Si:H)...
The solid-phase crystallization of amorphous Si films with/without a crystallization-induction (CI) ...
A nanosecond pulsed, Ytterbium doped optical fiber laser, operating at 1064 nm, has been used for la...