SURFACE-DENSITY OF STATES OF SB/GAAS(110) AND HGAAS(110) BY METASTABLE DEEXCITATION SPECTROSCOPY
- PASQUALI L
- PLESANOVAS A
- TARABINI AC
- NANNARONE S
- ABBATI I
- CANEPA M
- MATTERA L
- TERRENI S.
- RUOCCO, Alessandro
Publication date
January 1995
DOI Publisher
Elsevier BV ISSN
0368-2048 Citation count (estimate)
6Abstract
Metastable deexcitation spectroscopy (MDS) was applied to the study of the electronic structure of Sb/GaAs(110) and H:GaAs(110) systems. For both systems valuable insights into the surface electronic structure (effective surface density of states and surface charge density) were obtained. A surface to volume ratio extremely higher than photoemission was obtained for MDS. For both systems new features, never observed by more conventional surface spectroscopies, were detected
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