Add to ORKGOn the basis of RF characteristics and measured small-signal parameters, an equivalent circuit model was formulated and characterized for metal-semiconductor field effect transistors based on H-terminated polycrystalline diamond. Starting from on-wafer measurements, a bias-dependent transistor behavior representation was fully determined. Such an equivalent circuit model is the first important step to realize an RF IC based on diamond
This contribution reports on measured performance of a family of metal-semiconductor fieldeffect tra...
Thanks to its wide bandgap, exceptionally high thermal conductivity and relatively high carrier velo...
The paper presents a large-signal nonlinear circuit-oriented model for polycrystalline and single-cr...
On the basis of RF characteristics and measured small-signal parameters, an equivalent circuit model...
On the basis of RF characteristics and measured small-signal parameters, an equivalent circuit model...
On the bases of the RF characteristics and measured small-signal parameters, an equivalent circuit m...
On the bases of the RF characteristics and measured small-signal parameters, an equivalent circuit m...
In this work is shown that fluent shutter model it is enough well describes work field-effect diamon...
Homoepitaxial diamond has been used to demonstrate the RF performance of 50-nm gate length hydrogen-...
Three sets of different gate-length field-effect transistors (250, 120, and 50 nm) have been defined...
The superior electrical and thermal properties of diamond predestine this material to become an impo...
The paper presents a large-signal nonlinear circuit-oriented model for polycrystalline and single-c...
Metal-Semiconductor field effect transistor (MESFETs) were fabricated on hydrogen-terminated polycry...
This contribution reports on measured performance of a family of metal-semiconductor fieldeffect tra...
Thanks to its wide bandgap, exceptionally high thermal conductivity and relatively high carrier velo...
The paper presents a large-signal nonlinear circuit-oriented model for polycrystalline and single-cr...
On the basis of RF characteristics and measured small-signal parameters, an equivalent circuit model...
On the basis of RF characteristics and measured small-signal parameters, an equivalent circuit model...
On the bases of the RF characteristics and measured small-signal parameters, an equivalent circuit m...
On the bases of the RF characteristics and measured small-signal parameters, an equivalent circuit m...
In this work is shown that fluent shutter model it is enough well describes work field-effect diamon...
Homoepitaxial diamond has been used to demonstrate the RF performance of 50-nm gate length hydrogen-...
Three sets of different gate-length field-effect transistors (250, 120, and 50 nm) have been defined...
The superior electrical and thermal properties of diamond predestine this material to become an impo...
The paper presents a large-signal nonlinear circuit-oriented model for polycrystalline and single-c...
Metal-Semiconductor field effect transistor (MESFETs) were fabricated on hydrogen-terminated polycry...
This contribution reports on measured performance of a family of metal-semiconductor fieldeffect tra...
Thanks to its wide bandgap, exceptionally high thermal conductivity and relatively high carrier velo...
The paper presents a large-signal nonlinear circuit-oriented model for polycrystalline and single-cr...