16-pixel linear array of near-infrared photodetectors in polycrystalline Ge on Si

A novel one-dimensional array of photodetectors for the near infrared up to 1.55 mu m is reported. The device is based on polycrystalline Ge thermally evaporated on silicon, and consists of 16 pixels at a 100 mu m pitch. A responsivity of 16 mA/W was measured at 1.3 mu m with nanosecond response time