Germanium-on-glass near-infrared detectors

Ge-on-glass photodetectors is fabricated by wafer bonding and layer splitting, followed by the epitaxial growth of pn structures. The detectors exhibit a remarkably low dark current density of 50 mu A/cm(2) at 1 V reverse bias and responsivities as high as 0.33 and 0.43 A/W at 1.52 and 1.3 mu m, respectively. This approach can be readily extended to other substrates, enabling the integration of Ge on different platforms