A novel tandem SiGe-Si device is demonstrated which, based on different photoresponses in two back-to-back diodes, exhibits a voltage tunable spectral responsivity. This feature, in conjunction with a wavelength dependence in the current direction, allows the efficient decryption of a signal when substantial noise is added to distinct carrier frequencies. Time dependent encryption schemes are also possible via a modulated voltage bias. (C) 1997 American Institute of Physics
Germanium-on-silicon technology has been thoroughly studied in the last 20 years and it now reached ...
This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunc...
International audienceA new Si/Ge/Si heterojunction based waveguide photodetector has been demonstra...
A novel tandem SiGe-Si device is demonstrated which, based on different photoresponses in two back-t...
The invention relates to a voltage-controlled, wavelength-selective photodetector comprising a doubl...
We present a voltage-tunable wavelength-selective photodetector (VWP) for the near-infrared (NIR), r...
International audienceRecent advances in the theoretical and experimental studies of Ge/SiGe quantum...
Abstract—Spectral shaping of electrically controlled metal– semiconductor–metal-based tunable photod...
We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two p...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Extending and controlling the spectral range of light detectors is very appealing for several sensin...
We report the observation of electrically tuneable spectral responsivity in silicon-based photodetec...
We report on a novel near infrared SiGe phototransistor fabricated by a standard silicon photonics f...
Germanium-on-silicon technology has been thoroughly studied in the last 20 years and it now reached ...
This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunc...
International audienceA new Si/Ge/Si heterojunction based waveguide photodetector has been demonstra...
A novel tandem SiGe-Si device is demonstrated which, based on different photoresponses in two back-t...
The invention relates to a voltage-controlled, wavelength-selective photodetector comprising a doubl...
We present a voltage-tunable wavelength-selective photodetector (VWP) for the near-infrared (NIR), r...
International audienceRecent advances in the theoretical and experimental studies of Ge/SiGe quantum...
Abstract—Spectral shaping of electrically controlled metal– semiconductor–metal-based tunable photod...
We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two p...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
Extending and controlling the spectral range of light detectors is very appealing for several sensin...
We report the observation of electrically tuneable spectral responsivity in silicon-based photodetec...
We report on a novel near infrared SiGe phototransistor fabricated by a standard silicon photonics f...
Germanium-on-silicon technology has been thoroughly studied in the last 20 years and it now reached ...
This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunc...
International audienceA new Si/Ge/Si heterojunction based waveguide photodetector has been demonstra...