DISTRIBUTION OF OCCUPIED STATES IN A-C-H AND A-SI1-XCX-H ALLOYS AS DETERMINED BY TOTAL YIELD SPECTROSCOPY

The density of occupied states at the valence band edge and in the pseudo-gap is investigated by using Total yield spectroscopy. It is found that close to the valence band edge the yield spectra follow a (h-nu - E(v))3/(h-nu)2 dependence. A large increase of gap state density with increasing carbon content is also found