Analytic modeling of rf mems shunt connected capacitive switches

This paper deals with a general analytic approach for the design of RF microelectromechanical system (MEMS) switches. The chosen configuration for these microwave devices is composed of two- coplanar transmission line sections separated by a metal membrane providing a shunt connected variable impedance. Using a bias voltage it is possible to actuate the switch. The adopted methodology for the development of the circuital model is based on the image impedance parameter representation of a two-port network. Synthesis equations are presented, and design considerations are discussed. The proposed approach is validated by means of electromagnetic simulations