Add to ORKGAn accurate, non-quasi-static, non-linear equivalent circuit model of a power Si LD-MOSFET valid well into the microwave region has been extracted by means of a reliable and easy procedure. The model is intended for applications to high-efficiency power amplifiers in the low microwave region. The extraction is based on linear S-parameter measurements at many bias points with a hot-cold method for parasitic and intrinsic element determination. The model differs from the standard BSIM3 or MODEL9 models, ensuring accurate high-frequency performances
The coupling between charge transport, heat and energy flow required to model high frequency power d...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
Abstract — The coupling between charge transport, heat and energy flow required to model high frequ...
An accurate, non-quasi-static, non-linear equivalent circuit model of a power Si LD-MOSFET valid wel...
An accurate, non-quasi-static, non-linear equivalent circuit model of a power Si LD-MOSFET valid wel...
An accurate, non-quasi-static, non-linear equivalent circuit model of a power Si LD-MOSFET valid wel...
An accurate,non-quasi-static,non-linear equivalent circuit model of a power Si LD-MOSFET valid well ...
The maturation of low-cost silicon-on-insulator (SOI) MOSFET technology in the microwave domain has ...
Original extraction techniques of microwave small-signal model and technological parameters for SOI ...
The maturation of low cost SOI MOSFET technology in the microwave domain has brought about a need to...
Original extraction techniques of microwave small-signal model and technological parameters for SOI ...
Original extraction techniques of microwave small-signal model and technological parameters for SOI ...
We report on the characterization and modelling of a microwave MOSFET. We have characterized the tes...
The maturation of low cost Silicon-on-Insulator (SOI) MOSFET technology in the microwave domain has ...
The coupling between charge transport, heat and energy flow required to model high frequency power d...
The coupling between charge transport, heat and energy flow required to model high frequency power d...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
Abstract — The coupling between charge transport, heat and energy flow required to model high frequ...
An accurate, non-quasi-static, non-linear equivalent circuit model of a power Si LD-MOSFET valid wel...
An accurate, non-quasi-static, non-linear equivalent circuit model of a power Si LD-MOSFET valid wel...
An accurate, non-quasi-static, non-linear equivalent circuit model of a power Si LD-MOSFET valid wel...
An accurate,non-quasi-static,non-linear equivalent circuit model of a power Si LD-MOSFET valid well ...
The maturation of low-cost silicon-on-insulator (SOI) MOSFET technology in the microwave domain has ...
Original extraction techniques of microwave small-signal model and technological parameters for SOI ...
The maturation of low cost SOI MOSFET technology in the microwave domain has brought about a need to...
Original extraction techniques of microwave small-signal model and technological parameters for SOI ...
Original extraction techniques of microwave small-signal model and technological parameters for SOI ...
We report on the characterization and modelling of a microwave MOSFET. We have characterized the tes...
The maturation of low cost Silicon-on-Insulator (SOI) MOSFET technology in the microwave domain has ...
The coupling between charge transport, heat and energy flow required to model high frequency power d...
The coupling between charge transport, heat and energy flow required to model high frequency power d...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
Abstract — The coupling between charge transport, heat and energy flow required to model high frequ...