Inner composition, defects and morphology of AlGaAs nanowires grown by Au-catalyzed MOVPE

Prete, P
Buick, B
Speiser, E
Lovergine, N
Richter, W

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Publication date

January 2011

DOI

10.1557/opl.2011.1031

Publisher

Cambridge University Press

ISSN

1946-4274

Abstract

The inner composition, defect content and morphology of AlGaAs nanowires (NWs) grown on (111)B-GaAs by Au-catalyzed MOVPE is reported. The NWs grow tapered with their [111] axis normal to the substrate. The Raman spectra of single AlGaAs NWs were measured in non-resonant conditions with sub-μ-meter spatial resolution, allowing determination of the Al content. NWs consist of GaAs for TG<475°C, but show a two-fold compositional structure for TG >475°C, namely an AlxGa1-xAs core surrounded by an AlyGa1-yAs (y<x) shell, ascribed to the combination of Au-catalyzed (axial) and conventional (sidewall) growth. The cross-sectional shape of AlGaAs NWs changes from triangular (for TG=500÷525°C) to almost hexagonal (for TG=550°C), due to an exchange be...

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Inner composition, defects and morphology of AlGaAs nanowires grown by Au-catalyzed MOVPE

Abstract

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Inner composition, defects and morphology of AlGaAs nanowires grown by Au-catalyzed MOVPE

Abstract

Extracted data

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