We report the low-pressure chemical vapor deposition growth and field emission characterization of silicon nanowires SiNWs . Our field emission results show the importance of the so called conditioning process on the reproducibility of the emission performance itself; this effect has proven to be reversible for the investigated current regime. We explained this behavior by invoking a current-driven desorption of residual adsorbed gases. A highly reproducible turn-on electric field of 27 V/ m is found for a diode-connected SiNW planar sample. Furthermore, stability analysis is performed showing the technologically promising field emission behavior of the samples
[[abstract]]Highly porous, individually separated, and vertically aligned rough silicon rods (r-SiRs...
Silicon nanowires (SiNWs) were grown on an Au-coated Si(111) substrate at various gas pressures by v...
Vacuum field emission devices have become a promising candidate for emerging display technology due ...
We report the low-pressure chemical vapor deposition growth and field emission characterization of ...
We report the low-pressure chemical vapor deposition growth and field emission characterization of s...
Silicon nanowires were prepared by laser ablation and hydrogen plasma treatment. The electron field ...
SnO2-capped Si nanowires have been reproducibly fabricated via a simple one-step chemical vapor depo...
International audienceThis paper explores the field emission (FE) properties of highly crystalline S...
In this contribution the field emission by tunneling of electrons of 3C-SiC nanowires on Si substrat...
A multistep template replication route was employed to fabricate highly ordered silicon nanotube (Si...
We report observations of field emission from self-catalyzed GaAs nanowires grown on Si (111). The m...
textUsing the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are ...
We present a fully elaborated process to grow arrays of metallic nanowires with controlled geometry ...
[[abstract]]The electron field emission (EFE) properties of Si-nanowires (SiNW) were improved by coa...
[[abstract]]Highly porous, individually separated, and vertically aligned rough silicon rods (r-SiRs...
Silicon nanowires (SiNWs) were grown on an Au-coated Si(111) substrate at various gas pressures by v...
Vacuum field emission devices have become a promising candidate for emerging display technology due ...
We report the low-pressure chemical vapor deposition growth and field emission characterization of ...
We report the low-pressure chemical vapor deposition growth and field emission characterization of s...
Silicon nanowires were prepared by laser ablation and hydrogen plasma treatment. The electron field ...
SnO2-capped Si nanowires have been reproducibly fabricated via a simple one-step chemical vapor depo...
International audienceThis paper explores the field emission (FE) properties of highly crystalline S...
In this contribution the field emission by tunneling of electrons of 3C-SiC nanowires on Si substrat...
A multistep template replication route was employed to fabricate highly ordered silicon nanotube (Si...
We report observations of field emission from self-catalyzed GaAs nanowires grown on Si (111). The m...
textUsing the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are ...
We present a fully elaborated process to grow arrays of metallic nanowires with controlled geometry ...
[[abstract]]The electron field emission (EFE) properties of Si-nanowires (SiNW) were improved by coa...
[[abstract]]Highly porous, individually separated, and vertically aligned rough silicon rods (r-SiRs...
Silicon nanowires (SiNWs) were grown on an Au-coated Si(111) substrate at various gas pressures by v...
Vacuum field emission devices have become a promising candidate for emerging display technology due ...