To completely characterise the noise behaviour of a two port device, four noise parameters F-min, R-n, G(opt), and B-opt, must be determined. This paper reports improvements in the uncertainty related to the above parameters, taking into account measurement errors due both to the limited instrument precision and connection repeatability. Results are reported for noise characterisation of 0.3 mum delta -doped HEMT devices by Alenia, demonstrating as the common hot-cold measurement procedure can result with an error confidence as low as 0.2% for all the noise parameters
The assessment of uncertainties of a two-port noise parameters measurement, presented in the paper, ...
The noise figures of four InP HEMT LNAs at cryogenic temperature of 20 k were measured in millilab a...
In analog signal processing at microwave frequencies the noise performance of active devices is of f...
To completely characterise the noise behaviour of a two port device, four noise parameters F-min, R-...
To completely characterise the noise behaviour of a two port device, four noise parameters Fmin; Rn;...
In this paper, we discuss the experimental determination of noise parameters for high-electron-mobil...
Noise parameters are an electrical representation of the noise performance of transistors which is w...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
Abstract- Factors contributing to microwave noise parameter measure-ment accuracy have been examined...
This paper presents low frequency noise (LFN) measurements of some commonly used microwave transisto...
Experimental facts about noise are presented which help us to understand the correlation between noi...
High Electron Mobility Transistors (HEMT\u27s) have emerged as the device of choice for high frequen...
A previously developed simulator for noise-parameter measurements has been used in an extensive inve...
The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The crit...
The assessment of uncertainties of a two-port noise parameters measurement, presented in the paper, ...
The noise figures of four InP HEMT LNAs at cryogenic temperature of 20 k were measured in millilab a...
In analog signal processing at microwave frequencies the noise performance of active devices is of f...
To completely characterise the noise behaviour of a two port device, four noise parameters F-min, R-...
To completely characterise the noise behaviour of a two port device, four noise parameters Fmin; Rn;...
In this paper, we discuss the experimental determination of noise parameters for high-electron-mobil...
Noise parameters are an electrical representation of the noise performance of transistors which is w...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
Abstract- Factors contributing to microwave noise parameter measure-ment accuracy have been examined...
This paper presents low frequency noise (LFN) measurements of some commonly used microwave transisto...
Experimental facts about noise are presented which help us to understand the correlation between noi...
High Electron Mobility Transistors (HEMT\u27s) have emerged as the device of choice for high frequen...
A previously developed simulator for noise-parameter measurements has been used in an extensive inve...
The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The crit...
The assessment of uncertainties of a two-port noise parameters measurement, presented in the paper, ...
The noise figures of four InP HEMT LNAs at cryogenic temperature of 20 k were measured in millilab a...
In analog signal processing at microwave frequencies the noise performance of active devices is of f...