We report on measurements of step-step interaction on a flat Si(111)-(7x7) surface and on vicinal Si (001) surfaces with miscut angles ranging between 0.2 degrees and 8 degrees. Starting from scanning tunneling microscopy images of these surfaces and describing steps profile and interactions by the continuum step model, we measured the self-correlation function of single steps and the distribution of terrace widths. Empirical parameters, such as step stiffness and step-step interaction strength, were evaluated from the images. The present experiment allows to assess the dependence of the step-step repulsion on miscut angle, showing how parameters drawn from tunneling images can be used to interpolate between continuum mesoscopic models and ...
The step structure and terrace distribution of Si(001) vicinal surfaces has been studied by profile ...
International audienceThis paper investigates faceting mechanisms induced by electromigration in the...
Tunneling images of single atomic steps on Si(111) have been obtained with a tunneling microscope. T...
We report on measurements of step-step interaction on a flat Si(111)-(7x7) surface and on vicinal Si...
The roughness of monatomic A- and B-type step edges on 0.5° misoriented Si(001) has been analyzed on...
We derive relationships between the amount of step wandering and the strength of step-step interacti...
We have used scanning tunneling microscopy to study Si(113) 0.2° misoriented towards [11-bar0]. Rapi...
We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) ...
We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) ...
Using high-resolution scanning tunneling microscopy, we investigate the periodicity of mixed arrays ...
Ge(001) surfaces misoriented towards the [011] direction have been investigated with a UHV STM. The ...
A Si(111) vicinal (misorientation $\approx 0.6$) is studied by in situ Reflection Electron Microscop...
In this paper, we used an ultra-high-vacuum scanning tunneling microscope (STM) to study the step st...
High temperature scanning tunneling microscopy (STM) measurments are performed to study the behavior...
We have observed a conversion of step configuration of 3.5 degrees miscut Si(001) surface after depo...
The step structure and terrace distribution of Si(001) vicinal surfaces has been studied by profile ...
International audienceThis paper investigates faceting mechanisms induced by electromigration in the...
Tunneling images of single atomic steps on Si(111) have been obtained with a tunneling microscope. T...
We report on measurements of step-step interaction on a flat Si(111)-(7x7) surface and on vicinal Si...
The roughness of monatomic A- and B-type step edges on 0.5° misoriented Si(001) has been analyzed on...
We derive relationships between the amount of step wandering and the strength of step-step interacti...
We have used scanning tunneling microscopy to study Si(113) 0.2° misoriented towards [11-bar0]. Rapi...
We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) ...
We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) ...
Using high-resolution scanning tunneling microscopy, we investigate the periodicity of mixed arrays ...
Ge(001) surfaces misoriented towards the [011] direction have been investigated with a UHV STM. The ...
A Si(111) vicinal (misorientation $\approx 0.6$) is studied by in situ Reflection Electron Microscop...
In this paper, we used an ultra-high-vacuum scanning tunneling microscope (STM) to study the step st...
High temperature scanning tunneling microscopy (STM) measurments are performed to study the behavior...
We have observed a conversion of step configuration of 3.5 degrees miscut Si(001) surface after depo...
The step structure and terrace distribution of Si(001) vicinal surfaces has been studied by profile ...
International audienceThis paper investigates faceting mechanisms induced by electromigration in the...
Tunneling images of single atomic steps on Si(111) have been obtained with a tunneling microscope. T...