Up to now most of the experimental work regarding the adsorption of organic molecules has been concerned with silicon. Here we study the interface formation on a III-V-semiconductor, GaAs(001). We show that reflectance anisotropy spectroscopy (RAS) is a sensitive technique for investigating the interface formation between organic molecules and semiconductor surfaces. With RAS it is possible to determine the surface reconstruction and the structural changes at the interface during the deposition of organic molecules. These changes and the underlying adsorption process are discussed here for the adsorption of cyclopentene on GaAs(001)c(4x4), (2x4) and (4x2)
We report a reflectance difference spectroscopy (RDS) study of the optical anisotropy of GaAs:(001)...
By a combination of theoretical calculations and experiments, we have investigated the GaAs(001) sur...
Reflectance anisotropy spectroscopy (RAS) has been employed to characterize the overlayer growth of ...
There currently exists a wide range of powerful techniques for probing surfaces, mainly involving th...
We report on the results of a combined experimental study of the optical anisotropy of GaAs(001)-c(4...
We report on the results of a combined experimental study of the optical anisotropy of GaAs(001)-c(4...
The formation of the Ge/GaAs(001) interface has been investigated following the transformation of an...
Reflectance anisotropy spectroscopy (RAS) has proved itself to be extremely sensitive to both surfac...
We show that reflection anisotropy spectroscopy (RAS) can be used to characterize the growth of orga...
The growth of thin indium-layers on the GaAs(100) As-rich (2 x 4)/c(2 x 8) surface has been investig...
The method of reflectance anisotropy spectroscopy (RAS) has proved extremely useful in monitoring th...
The surface or bulk origin of the optical anisotropies detected by reflectance anisotropy spectrosco...
We present the use of Reflectance Anisotropy Spectroscopy (RAS) as a probe to study the deposition o...
The development and control of nanoscale properties is a major goal in science and technology; for t...
We report a reflectance difference spectroscopy (RDS) study of the optical anisotropy of GaAs:(001)...
By a combination of theoretical calculations and experiments, we have investigated the GaAs(001) sur...
Reflectance anisotropy spectroscopy (RAS) has been employed to characterize the overlayer growth of ...
There currently exists a wide range of powerful techniques for probing surfaces, mainly involving th...
We report on the results of a combined experimental study of the optical anisotropy of GaAs(001)-c(4...
We report on the results of a combined experimental study of the optical anisotropy of GaAs(001)-c(4...
The formation of the Ge/GaAs(001) interface has been investigated following the transformation of an...
Reflectance anisotropy spectroscopy (RAS) has proved itself to be extremely sensitive to both surfac...
We show that reflection anisotropy spectroscopy (RAS) can be used to characterize the growth of orga...
The growth of thin indium-layers on the GaAs(100) As-rich (2 x 4)/c(2 x 8) surface has been investig...
The method of reflectance anisotropy spectroscopy (RAS) has proved extremely useful in monitoring th...
The surface or bulk origin of the optical anisotropies detected by reflectance anisotropy spectrosco...
We present the use of Reflectance Anisotropy Spectroscopy (RAS) as a probe to study the deposition o...
The development and control of nanoscale properties is a major goal in science and technology; for t...
We report a reflectance difference spectroscopy (RDS) study of the optical anisotropy of GaAs:(001)...
By a combination of theoretical calculations and experiments, we have investigated the GaAs(001) sur...
Reflectance anisotropy spectroscopy (RAS) has been employed to characterize the overlayer growth of ...