This paper discusses the modeling of switching losses in MOSFETs half-bridges. The model proposed in the paper provides a trade-off between accuracy and computing simplicity for quick feasibility investigations and comparative evaluations among different MOSFETs combinations to be selected for the design of high-efficiency switching power supplies. The proposed model also enables a detailed analysis of capacitive currents circulating through the MOSFETs during commutations, thus allowing a more accurate loss understanding and calculation
When the full-bridge converter works under the light load condition, the power efficiency obtained b...
When the full-bridge converter works under the light load condition, the power efficiency obtained b...
In this paper, a new behavioural model is proposed for calculating power losses in power semiconduct...
This paper discusses the modeling of switching losses in MOSFETs half-bridges. The model proposed in...
The piecewise linear model has traditionally been used to calculate switching losses in switching mo...
This paper presents an analytical modeling of a MOSFET during switching operation, aimed at determin...
The measurement of losses in high efficiency / high power converters is difficult. Measuring the los...
Realistic estimation of power MOSFET switching losses is critical for predicting the maximum junctio...
Realistic estimation of power MOSFET switching losses is critical for predicting the maximum junctio...
Realistic estimation of power MOSFET switching losses is critical for predicting the maximum junctio...
This paper investigates the accuracy of a comprehensive analytical switching loss model (benchmark m...
This paper discusses a novel method for the analysis of MOSFET commutations and the investigation of...
An accurate analytical switching loss model for a SiC MOSFET and Schottky diode half-bridge for a wi...
Modern wide-bandgap devices, such as SiC- or GaN-based devices, feature significantly reduced switch...
In this paper, half bridge DC-DC converters with transformer isolation presented in the literature a...
When the full-bridge converter works under the light load condition, the power efficiency obtained b...
When the full-bridge converter works under the light load condition, the power efficiency obtained b...
In this paper, a new behavioural model is proposed for calculating power losses in power semiconduct...
This paper discusses the modeling of switching losses in MOSFETs half-bridges. The model proposed in...
The piecewise linear model has traditionally been used to calculate switching losses in switching mo...
This paper presents an analytical modeling of a MOSFET during switching operation, aimed at determin...
The measurement of losses in high efficiency / high power converters is difficult. Measuring the los...
Realistic estimation of power MOSFET switching losses is critical for predicting the maximum junctio...
Realistic estimation of power MOSFET switching losses is critical for predicting the maximum junctio...
Realistic estimation of power MOSFET switching losses is critical for predicting the maximum junctio...
This paper investigates the accuracy of a comprehensive analytical switching loss model (benchmark m...
This paper discusses a novel method for the analysis of MOSFET commutations and the investigation of...
An accurate analytical switching loss model for a SiC MOSFET and Schottky diode half-bridge for a wi...
Modern wide-bandgap devices, such as SiC- or GaN-based devices, feature significantly reduced switch...
In this paper, half bridge DC-DC converters with transformer isolation presented in the literature a...
When the full-bridge converter works under the light load condition, the power efficiency obtained b...
When the full-bridge converter works under the light load condition, the power efficiency obtained b...
In this paper, a new behavioural model is proposed for calculating power losses in power semiconduct...