Epitaxial Growth of Hexagonal Boron Nitride on Ir(111)

Fabrizio Orlando
Rosanna Larciprete
Paolo Lacovig
Ilan Boscarato
Alessandro Baraldi
Silvano Lizzit

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Publication date

January 2012

DOI

10.1021/jp207571n

Publisher

American Chemical Society (ACS)

ISSN

1932-7447

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Abstract

The formation of a hexagonal boron nitride (h-BN) layer through dissociation of borazine (B3N3H6) molecules on Ir(111) has been investigated by a combination of X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure, temperature-programmed desorption, and lowenergy electron diffraction

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Epitaxial Growth of Hexagonal Boron Nitride on Ir(111)

Abstract

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Epitaxial Growth of Hexagonal Boron Nitride on Ir(111)

Abstract

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